BBY57-02W

BBY 57-02W Silicon Tuning Diode Preliminary data Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio Designed for low tuning voltage operation for VCO’s in mobile communications equipment For control elements such as TCXOs and VCXOs 2 1 VES05991 Type BBY 57-02W Marking 5 Ordering Code Q62702-B915 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-30-1998 1998-11-01 BBY 57-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 1 100 nA Unit IR IR - VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance CT 16.5 4 17.5 8.7 7.1 4.73 2.45 3.7 0.3 0.09 0.6 18.6 5.5 4.5 - pF VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance Ω pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 57-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = ...