BBY65

Silicon Tuning Diode High Q hyperabrupt tuning diode Very low capacitance spread Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOS and VCXOS High capacitance ratio and good C-V linearity Pb-free (RoHS compliant) package BBY65... BBY65-02V  Type BBY65-02V Package SC79 Configuration single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) Marking 0.6 F Value 15 50 -55 ... 150 -55 ... 150 Unit V mA °C 1 2011-06-15 BBY65... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C IR - - 10 - - 100 AC Characteristics Diode capacitance VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8 Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz CT0.3/ CT4.7 CT1/CT3 rS 10 10.9 - 4.55 - 0.6 0.9 Unit nA pF pF pF Ω 2 2011-06-15 CT Diode capacitance CT = ƒ (VR) f = 1MHz 40 pf 30 25 20 15 10 5 00 1 2 3 V 5 VR BBY65... 3 2011-06-15 Package SC79 BBY65... 4 2011-06-15 BBY65... Date Code marking for discrete packages with one digit (SCD80, SC79, SC751)...