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PNP Transistor. BC177 Datasheet

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PNP Transistor. BC177 Datasheet






BC177 Transistor. Datasheet pdf. Equivalent




BC177 Transistor. Datasheet pdf. Equivalent





Part

BC177

Description

PNP Transistor



Feature


DISCRETE SEMICONDUCTORS DATA SHEET * M 3D125 BC177 PNP general purpose transi stor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Phil ips Semiconductors Product specificat ion PNP general purpose transistor FEA TURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switchin.
Manufacture

Philipss

Datasheet
Download BC177 Datasheet


Philipss BC177

BC177; g and amplification. DESCRIPTION PNP tra nsistor in a TO-18; SOT18 metal package . NPN complement: BC107. 3 BC177 PINNI NG PIN 1 2 3 emitter base collector, co nnected to the case DESCRIPTION 1 hand book, halfpage 2 3 2 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VC BO VCEO ICM Ptot hFE fT PARAMETER colle ctor-base voltage .


Philipss BC177

collector-emitter voltage peak collector current total power dissipation DC cur rent gain transition frequency Tamb ≤ 25 °C IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −5 V; f = 100 MHz op en emitter open base CONDITIONS − − − − 125 100 MIN. MAX. −50 −45 −200 300 500 − MHz V V mA mW UNIT 1997 Jun 04 2 Philips Semiconductors Product specification PNP general purpose tr.


Philipss BC177

ansistor LIMITING VALUES In accordance w ith the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collec tor-base voltage collector-emitter volt age emitter-base voltage collector curr ent (DC) peak collector current peak ba se current total power dissipation stor age temperature junction temperature op erating ambient te.

Part

BC177

Description

PNP Transistor



Feature


DISCRETE SEMICONDUCTORS DATA SHEET * M 3D125 BC177 PNP general purpose transi stor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Phil ips Semiconductors Product specificat ion PNP general purpose transistor FEA TURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switchin.
Manufacture

Philipss

Datasheet
Download BC177 Datasheet




 BC177
DISCRETE SEMICONDUCTORS
DATA SHEET
*
M3D125
BC177
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
1997 Jun 04




 BC177
Philips Semiconductors
PNP general purpose transistor
Product specification
BC177
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to the case
handbook, halfpa1ge
2
3
2
MAM263
3
1
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb 25 °C
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
125
100
MAX.
50
45
200
300
500
UNIT
V
V
mA
mW
MHz
1997 Jun 04
2




 BC177
Philips Semiconductors
PNP general purpose transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient note 1
thermal resistance from junction to case
Note
1. Transistor mounted on an FR4 printed-circuit board.
Product specification
BC177
MIN.
65
65
MAX.
50
45
5
100
200
200
300
+150
175
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
VALUE
0.5
0.2
UNIT
K/mW
K/mW
1997 Jun 04
3



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