BC239

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239 Emitter-Base Voltage : BC237 : BC238/239 Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCES 50 30 VCEO 45 25 VEBO 6 5 100 500 150 -55 ~ 150 V V mA mW °C °C 1. Collector 2. Base 3. Emitter V V Rating Unit V V IC PC TJ T STG ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage :BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector Base Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Symbol BVCEO Test Conditions IC=2mA, IB=0 IE=1µA, IC=0 45 25 6 5 ICES VCE=50V, IB=0 VCE=30V, IB=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA VCE=5V, IC=10mA Collector Base Capacitance Emitter Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 CCBO CEBO NF NF VCB=10V, f=1MHz VEB=0.5V, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2kohm VCE=5V, IC=0.2mA RG=2kohm, f=30~15KHz 0.2 0.2 120 0.07 0.2 0.73 0.87 0.62 85 250 3.5 8 2 6 10 4 4 15 15 800 0.2 0.6 0.83 1.05 0.7 nA nA V V V V V MHz MHz pF pF dB dB dB V V V V Min Typ Max Unit BVEBO hFE VCE (sat) VBE...