BC307

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –45 –50 –5.0 –100 350 2.8 –25 –30 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 Watts 8.0 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C (VCES = –30 V, VBE = 0) TA = 125°C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C V(BR)CEO V(BR)EBO ICES –45 –25 –5.0 –5.0 — — — — Order this document by BC307/D BC307 BC307B BC307C BC308C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit — — Vdc —— — — Vdc —— –0.2 –15 nAdc –0.2 –15 –0.2 –4.0 µA –0.2 –4.0 REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Da...