MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
R...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier
Transistors
PNP Silicon
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC307, B, C BC308C Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
–45 –50
–5.0 –100 350 2.8
–25 –30
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.0 Watts 8.0 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C (VCES = –30 V, VBE = 0) TA = 125°C
BC307,B,C BC308C
BC307,B,C BC308C
BC307,B,C BC308C BC307,B,C BC308C
V(BR)CEO V(BR)EBO
ICES
–45 –25
–5.0 –5.0
— — — —
Order this document by BC307/D
BC307 BC307B BC307C BC308C
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
— — Vdc ——
— — Vdc ——
–0.2 –15 nAdc
–0.2 –15
–0.2 –4.0
µA
–0.2 –4.0
REV 1
Motorola Small–Signal
Transistors, FETs and Diodes Device Da...