BC307/308/309
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
PNP Epitaxial Silicon Transistor
...
BC307/308/309
BC307/308/309
Switching and Amplifier Applications
Low Noise: BC309
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCES
Collector-Emitter Voltage : BC307 : BC308/309
VCEO
Collector-Emitter Voltage : BC307 : BC308/309
VEBO IC PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature
1 TO-92 1. Collector 2. Base 3. Emitter
Value
-50 -30
-45 -25 -5 -100 500 150 -55 ~ 150
Units
V V
V V V mA mW °C °C
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC307/308/309
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage : BC307 : BC308/309
IC= -2mA, IB=0
BVCES
Collector-Emitter Breakdown Voltage : BC307 : BC308/309
IC= -10µA, VBE=0
BVEBO ICES
hFE VCE (sat)
Emitter-Base Breakdown Voltage
Collector Cut-off Current : BC307 : BC308/30...