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BC307B Dataheets PDF



Part Number BC307B
Manufacturers Motorola
Logo Motorola
Description Amplifier Transistors
Datasheet BC307B DatasheetBC307B Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC307/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC307,B,C BC308C BC309B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 307 –45.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC307/D PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER BC307,B,C BC308C BC309B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC 307 –45 –50 BC 308C –25 –30 –5.0 –100 350 2.8 1.0 8.0 – 55 to +150 BC 309 –25 –30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C (VCES = –30 V, VBE = 0) TA = 125°C BC307 BC308C BC309B BC307 BC308C BC309B BC307 BC308C BC309B BC307 BC308C BC309B V(BR)CEO –45 –25 –25 –5.0 –5.0 –5.0 — — — — — — — — — — — — –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 — — — — — — –15 –15 –15 –4.0 –4.0 –4.0 Vdc V(BR)EBO Vdc ICES nAdc µA Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC307,B,C BC308C BC309B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE BC307B/309B BC307C/308C BC307 BC308C BC307B/309B BC307C/308C BC307B/309B BC307C/308C Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VCE(sat) — — — VBE(sat) — — VBE(on) –0.55 –0.7 –1.0 –0.62 — — –0.7 Vdc –0.10 –0.30 –0.25 –0.3 –0.6 — Vdc — — 120 120 200 420 — — 150 270 — — 290 500 180 300 — — 800 800 460 800 — — Vdc — (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –100 mAdc, VCE = –5.0 Vdc) DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC307 BC308C BC309B Ccbo NF BC309 BC307 BC308C BC309B — — — — 2.0 2.0 2.0 2.0 4.0 10 10 4.0 — — — — 280 320 360 — — — — 6.0 pF dB MHz Common Base Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) 1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC307,B,C BC308C BC309B 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = –10 V TA = 25°C V, VOLTAGE (VOLTS) –1.0 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 VCE(sat) @ IC/IB = 10 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = –10 V 0.3 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 Figure 1. Normalized DC Current Gain f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 2. “Saturation” and “On” Voltages 400 300 200 150 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) –50 VCE = –10 V TA = 25°C 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 TA = 25°C 3.0 Cob 2.0 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS) –20 –30 –40 Figure 3. Current–Gain — Bandwidth Product Figure 4. Capacitances 0.5 0.3 VCE = –10 V f = 1.0 kHz TA = 25°C r b′, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) 150 140 130 VCE = –10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 120 110 0.01 –0.1 –0.2 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 100 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 Figure 5. Output Admittance Figure 6. Base Spreading Resistance Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC307,B,C BC308C BC309B PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0..


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