Document
DFM900FXM12-A000
DFM900FXM12-A000
Fast Recovery Diode Module Preliminary Information
DS5479-1.2 July 2001
FEATURES
s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can Be Paralleled for 1800A Rating s MMC Baseplate With AlN Substrates
KEY PARAMETERS VRRM VF (typ) (max) IF (max) IFM
1200V 1.9V 900A 1800A
External connection 1(C1) 2(C2)
APPLICATIONS
s Chopper Diodes s Boost and Buck Converters s Free-wheel Circuits s Snubber Circuits s Resonant Converters s Induction Heating s Multi-level Switch Inverters The DFM900FXM12-A000 is a dual 1200 volt, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
3(A1) 4(A2)
External connection
External connection for single 1800A diode application Fig. 1 Circuit diagram
3
1
4
2
ORDERING INFORMATION
Order As:
DFM900FXM12-A000
Note: When ordering, please use the complete part number. Outline type code: F (See package details for further information) Fig. 2 Electrical connections - (not to scale)
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DFM900FXM12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VRRM IF IFM I2t Pmax Visol Qpd Parameter Repetitive peak reverse voltage Forward current (per arm) Max. forward current I2t value fuse current rating Maximum power dissipation Isolation voltage Partial discharge Tvj = 125˚C DC, Tcase = 75˚C, Tvj = 125˚C Tcase = 110˚C, tp = 1ms VR = 0, tp = 10ms, Tvj = 125˚C Tcase = 25˚C, Tvj = 125˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1200V, V2 = 900V, 50Hz RMS Test Conditions Max. 1200 900 1800 150 3700 4 10 Units V A A kA2s W kV pC
THERMAL AND MECHANICAL RATINGS
Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 20mm 10mm 175 Test Conditions Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Tstg Junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M8 Mounting torque 5Nm (with mounting grease) –40 125 125 5 10 ˚C ˚C Nm Nm 8 ˚C/kW Min. Typ. -
Symbol Rth(j-c)
Parameter Thermal resistance - diode (per arm)
Max. 27
Units ˚C/kW
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DFM900FXM12-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise. Symbol IRM VF Parameter Peak reveerse current Forward voltage Test Conditions VR = 1200V, Tvj = 125˚C IF = 600A IF = 600A, Tvj = 125˚C L Inductance Min. Typ. 1.9 2.1 20 Max. 15 2.2 2.4 Units mA V V nH
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise. Symbol LM Parameter Module inductance (externally connected in parallel) Test Conditions Min. Typ. 15 Max. Units nH
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise. Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions IF = 900A, dIF/dt = 7000A/µs, VR = 600V Min. Typ. 600 150 60 Max. Units A µC mJ
Tvj = 125˚C unless stated otherwise. Symbol Irr Qrr Erec Parameter Peak reverse recovery current Reverse recovery charge Reverse recovery energy Test Conditions IF = 900A, dIF/dt = 6300A/µs, VR = 600V Min. Typ. 720 225 105 Max. Units A µC mJ
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DFM900FXM12-A000
TYPICAL CHARACTERISTICS
2400 2200 2000 1800
Forward current, IF - (A)
100
1600 1400 1200 1000 800 600 400 200 0 0 0.5 1
Tj = 25˚C
Tj = 125˚C
Transient thermal impedance, Zth (j-c) - (°C/kW )
10
2.5 Forward voltage, VF - (V)
1.5
2
3
3.5
1 0.001
1 2 3 4 Ri (˚C/KW) 1.081 3.7409 4.7184 17.5092 τi (ms) 0.0066332 1.4384 12.8758 110.2138 0.01 0.1 Pulse width, tp - (s) 1 10
Fig. 2 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
4000
1300 1200 1100
Power dissipation, Ptot - (W)
3000
1000
DC forward current, IF - (A)
900 800 700 600 500 400 300 200 100
2000
1000
0 0
20
40 60 80 100 120 Case temperature, Tcase - (˚C)
140
160
0 0
20
40 60 80 100 120 Case temperature, Tcase - (˚C)
140
160
Fig. 5 Power dissipation
Fig. 6DC current rating vs case temperature
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DFM900FXM12-A000
1000 900 800
Reverse rec.