Gate Turn-off Thyristor
DG306AE25
DG306AE25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000
APPLICAT...
Description
DG306AE25
DG306AE25
Gate Turn-off Thyristor
Replaces March 1998 version, DS4089 - 3.2 DS4099-4.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC) s Uninterruptable Power Supplies s High Voltage Converters s Choppers s Welding s Induction Heating s DC/DC Converters
KEY PARAMETERS 600A ITCM VDRM 2500V 225A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt
FEATURES
s Double Side Cooling s High Reliability In Service s High Voltage Capability s Fault Protection Without Fuses s High Surge Current Capability s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
Outline type code: E. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 2500 16 Conditions
DG306AE25
Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 600 225 350 Units A A A
Repetitive peak controllable on-state current VD = 67%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 1.0µF Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
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DG306AE25
SURGE RATINGS
Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD...
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