DatasheetsPDF.com

DIM600DCM17-A000 Dataheets PDF



Part Number DIM600DCM17-A000
Manufacturers Dynex
Logo Dynex
Description IGBT Chopper Module
Datasheet DIM600DCM17-A000 DatasheetDIM600DCM17-A000 Datasheet (PDF)

www.DataSheet4U.com DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5491-2.0 DS5491-3.1 Octtober 2002 FEATURES s s s s 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS s s s Choppers Motor Controllers Traction Dri.

  DIM600DCM17-A000   DIM600DCM17-A000


Document
www.DataSheet4U.com DIM600DCM17-A000 DIM600DCM17-A000 IGBT Chopper Module Replaces issue March 2002, version DS5491-2.0 DS5491-3.1 Octtober 2002 FEATURES s s s s 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 600A 1200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS s s s Choppers Motor Controllers Traction Drives 5(E1) 1(E1) 2(C2) 6(G1) The Powerline range of modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 7(C1) 3(C1) 4(E2) Fig. 1 Chopper circuit diagram ORDERING INFORMATION Order As: DIM600DCM17-A000 Note: When ordering, please use the whole part number. Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 www.dynexsemi.com www.DataSheet4U.com DIM600DCM17-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (IGBT arm) Diode I2t value (Diode arm) Visol QPD Isolation voltage - per module Partial discharge - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS Tcase = 75˚C 1ms, Tcase = 110˚C Tcase = 25˚C, Tj = 150˚C VR = 0, tp = 10ms, Tvj = 125˚C VGE = 0V Test Conditions Max. 1700 ±20 600 1200 5200 120 120 4000 10 Units V V A A W kA2s kA2s V pC 2/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com www.DataSheet4U.com DIM600DCM17-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 20mm 10mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (IGBT arm) Thermal resistance - diode (Diode arm) Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 –40 150 125 125 5 2 10 ˚C ˚C ˚C Nm Nm Nm 40 40 8 ˚C/kW ˚C/kW ˚C/kW Min. Typ. Max. 27 Units ˚C/kW Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11 www.dynexsemi.com www.DataSheet4U.com DIM600DCM17-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125˚C IGES VGE(TH) VCE(sat)† Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 30mA, VGE = VCE VGE = 15V, IC = 600A VGE = 15V, IC = 600A, , Tcase = 125˚C IF IFM VF† Diode forward current Diode maximum forward current Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Diode forward voltage (IGBT arm) Diode forward voltage (Diode arm) Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125˚C, VCC = 1000V, tp ≤ 10µs, VCE(max) = VCES – L*. di/dt IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 IF = 600A, Tcase = 125˚C DC tp = 1ms IF = 600A Min. 4.5 Typ. 5.5 2.7 3.4 2.0 2.0 2.1 2.1 45 3.8 20 0.27 2780 2400 Max. 1 20 4 6.5 3.2 4.0 600 1200 2.3 2.3 2.4 2.4 Units mA mA µA V V V A A V V V V nF nF nH mΩ.


DIM400LSS17-A000 DIM600DCM17-A000 DIM800DCM17-A000


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)