DL4448

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# DL4448 Low Current Leakage Metalurgically Bonded Construction Low Cost 500mW 100Volt Switching Diode MINIMELF Maximum Ratings Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 35 °C/W Junction To Ambient Cathode Mark Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM VF 75V 100V B C 150mA 500mW 150°C 500mA Resistive Load f > 50Hz A t<1s DIMENSIONS DIM A B C INCHES MIN .134 .008 .055 MAX .142 .016 .059 MM MIN 3.40 .20 1.40 MAX 3.60 .40 1.50 NOTE 1.0V(MAX) IFM = 100mA; 0.62-0.72V I FM = 5.0mA IR 25nA 5.0uA 50µA 4pF VR=20Volts TJ=25°C VR=75V TJ=150°C VR=20V ∅ SUGGESTED SOLDER PAD LAYOUT 0.105 Measured at 1.0MHz, VR=4.0V Trr 4nS IF=10mA VR = 6V RL=100Ω *Pulse test: Pulse width 300 µsec, Duty cycle 2% CJ 0.075” 0.030” www.mccsemi.com DL4448 Figure 1 Typical Forward Characteristics 200 100 60 40 500 20 MilliAmps 10 6 4 2 25°C 1 .6 .4 .2 .1 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 100 400 600 MCC Figu...