DL4454

MCC Features l l l l l
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# DL4454 Silicon Switching Diode 500 mW 75 Volt Fast Switching Speed Low Current Leakage Low Cost Compression Bond Construction Surface Mount Application Maximum Ratings l Operation & Storage Temperature: -55oC to +150oC l Maximum Thermal Resistance: 400K/W Junction to Ambient Electrical Characteristics @ 25oC Unless Otherwise Specified Reverse Volt. Peak Reverse Volt. Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Volt. Maximum DC Reverse Current At Rated DC Blocking Volt. Typical Junction Capacitance VR V RM IO P TOT TJ I FSM VF IR 50V 75V Resistive Load 150mA f>50Hz 500mW 175 o C 500mA 8.3ms, half sine I FM=10mA; 1.0V T J=25 o C 0.1uA V R=50V T J=25 o C Measured at 1.0MHz, V R=4.0V I F=10mA V R=6V I R=1mA RL =100OHMS A B C A B MINIMELF Cathode Mark C DIMENSION DIM INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 0.20 1.40 MM MAX 3.60 0.40 1.50 NOTE CJ 2pF SUGGESTED SOLDER PAD LAYOUT 0.105 Reverse Recovery Time T rr 4nS Pulse test: Pulse width 300 usec, Duty cycle 2%. 0.075” 0.030” www.mccsemi.com DL4454 Figure 1 Typical Forward Characteristics 200 100 60 40 20 MilliAmps 10 6 4 2 1 .6 .4 .2 .1 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 25°C 100 400 600 MCC Figure 2 Forward De...