FSK RECEIVER. MC3346 Datasheet

MC3346 RECEIVER. Datasheet pdf. Equivalent

MC3346 Datasheet
Recommendation MC3346 Datasheet
Part MC3346
Description WIDEBAND FSK RECEIVER
Feature MC3346; Order this document by MC3346/D General Purpose Transistor Array One Differentially Connected Pair .
Manufacture Motorola
Datasheet
Download MC3346 Datasheet





Motorola MC3346
General Purpose Transistor
Array One Differentially
Connected Pair and Three
Isolated Transistor Arrays
The MC3346 is designed for general purpose, low power applications for
consumer and industrial designs.
Guaranteed Base–Emitter Voltage Matching
Operating Current Range Specified: 10 µA to 10 mA
Five General Purpose Transistors in One Package
Order this document by MC3346/D
MC3346
GENERAL PURPOSE
TRANSISTOR ARRAY
SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Substrate Voltage
Collector Current – Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Operating Temperature Range
Storage Temperature Range
Symbol
VCEO
VCBO
VEB
VCIO
IC
PD
TA
Tstg
Value
15
20
5.0
20
50
1.2
10
–40 to +85
–65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
W
mW/°C
°C
°C
14
1
P SUFFIX
PLASTIC PACKAGE
CASE 646
14
1
D SUFFIX
PLASTIC PACKAGE
CASE 751A
(SO–14)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC3346D
MC3356P
TA = – 40° to +85°C
SO–14
Plastic DIP
PIN CONNECTIONS
14 13
Q5
12 11 10
Q4
9
8
Q1 Q2 Q3
1 2 3 4 5 67
Pin 13 is connected to substrate and must remain at the lowest circuit potential.
MOTOROLA ANALOG IC DEVICE DATA
© Motorola, Inc. 1996
Rev 0
1



Motorola MC3346
MC3346
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.)
Characteristics
Symbol
STATIC CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 10 µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Substrate Breakdown Voltage
(IC = 10 µA)
Emitter–Base Breakdown Voltage
(IE = 10 µAdc)
Collector–Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
DC Current Gain
(IC = 10 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 mAdc, VCE = 3.0 Vdc)
(IC = 10 µAdc, VCE = 3.0 Vdc)
Base–Emitter Voltage
(VCE = 3.0 Vdc, IE = 1.0 mAdc)
(VCE = 3.0 Vdc, IE = 10 mAdc)
Input Offset Current for Matched Pair Q1 and Q2
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Magnitude of Input Offset Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Temperature Coefficient of Base–Emitter Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Temperature Coefficient
Collector–Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(VCE = 3.0 Vdc, IC = 100 µAdc, RS = 1.0 k, f = 1.0 kHz)
Forward Current Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
Short Circuit Input Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Open Circuit Output Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Reverse Voltage Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
Forward Transfer Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Input Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Output Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
Current–Gain – Bandwidth Product
(VCE = 3.0 Vdc, IC = 3.0 mAdc)
Emitter–Base Capacitance
(VEB = 3.0 Vdc, IE = 0)
Collector–Base Capacitance
(VCB = 3.0 Vdc, IC = 0)
Collector–Substrate Capacitance
(VCS = 3.0 Vdc, IC = 0)
V(BR)CBO
V(BR)CEO
V(BR)CIO
V(BR)EBO
ICBO
hFE
VBE
|IIO1 – IIO2|
VBE
DT
VIO
DT
ICEO
NF
hFE
hie
hoe
hre
yfe
yie
yoe
fT
Ceb
Ccb
CCI
Min Typ Max Unit
20 60
– Vdc
15 –
– Vdc
20 60
– Vdc
5.0 7.0
– Vdc
– – 40 nAdc
– 140
40 130
– 60
Vdc
– 0.72 –
– 0.8 –
– 0.3 2.0 µAdc
– 0.5 5.0 mVdc
– –1.9 – mV/°C
– 1.0 – µV/°C
– – 0.5 µAdc
– 3.25 –
– 110 –
– 3.5 –
– 15.6 –
– 1.8 –
– 31–j1.5 –
– 0.3 + j0.04 –
– 0.001 + j0.03 –
300 550
– 0.6 –
– 0.58 –
– 2.8 –
dB
k
µmhos
x10–4
MHz
pF
pF
pF
2 MOTOROLA ANALOG IC DEVICE DATA



Motorola MC3346
MC3346
Figure 1. Collector Cutoff Current
versus Temperature (Each Transistor)
102
IB = 0
101
VCE = 10 V
1.0
10–1 VCE = 5.0 V
10–2
10–3
0
25 50
75 100
TA, AMBIENT TEMPERATURE (°C)
125
Figure 2. Collector Cutoff Current
versus Temperature (Each Transistor)
103
102
101
VCB = 15 V
1.0
VCB = 5.0 V
VCB = 10 V
10–1
10–2
0
25 50 75 100
TA, AMBIENT TEMPERATURE (°C)
125
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
Figure 3. Input Offset Characteristics
for Q1 and Q2
0.02 0.03 0.05 0.1 0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Base–Emitter and Input Offset
Voltage Characteristics
0.9 5.0
0.8 4.0
0.7 VBE
3.0
0.6 2.0
0.5
0.4
0.01
VIO
0.05 0.1
0.5 1.0
IE, EMITTER CURRENT (mAdc)
5.0
1.0
0
10
140
130
110
90
70
50
0.01
Figure 5. DC Current Gain
hFE
3.5
3.0
2.5
2.0
1.5
1.0
hFE1
hFE2
or
hFE2
hFE1
0.05 0.1
0.5 1.0
IE, EMITTER CURRENT (mAdc)
5.0
0.95
0.9
0.85
0.8
0.75
10
MOTOROLA ANALOG IC DEVICE DATA
3





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