POWER TRANSISTOR. SD57045 Datasheet

SD57045 TRANSISTOR. Datasheet pdf. Equivalent

SD57045 Datasheet
Recommendation SD57045 Datasheet
Part SD57045
Description RF POWER TRANSISTOR
Feature SD57045; ® SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL M.
Manufacture ST Microelectronics
Datasheet
Download SD57045 Datasheet




ST Microelectronics SD57045
® SD57045
RF POWER TRANSISTORS
The LdmoST FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENT THERMAL STABILITY
ν COMMON SOURCE CONFIGURATION
ν POUT = 45 W PEP with 13 dB gain @ 945 MHz
ν BeO FREE PACKAGE
DESCRIPTION
The SD57045 is a common source N-Channel
Enhancement-Mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57045 is designed for high gain
and broadband performance operating in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
M243
(Epoxy Sealed)
ORDER CODE
SD57045
BRANDING
TSD57045
PIN CONNECTION
1. Drain
2. Gate
3.Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
S ym b o l
V(BR)DSS
VDGR
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 M)
Gate-Source Voltage
Drain Current
Power Dissipation (@ T c = 70 oC)
Max. O perating Junction Temperature
Storage Temperature
Value
65
65
± 20
5
93
200
-65 to 200
THERMAL DATA (Tcase = 70 oC)
Rth (j-c) Junct ion-Case Thermal Resistance
Rth(c -s) Case-Heatsink Thermal Resist ance
1.4
0.45
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000
Uni t
V
V
V
A
W
oC
oC
oC/ W
oC/ W
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ST Microelectronics SD57045
SD57045
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC
Symb ol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS( ON)
G FS
CISS
COSS
CRSS
VGS = 0V
VGS = 0V
VGS = 20V
VDS = 28V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Parameter
IDS = 1 mA
VDS = 28 V
VDS = 0 V
ID = 250 mA
ID = 3 A
ID = 5 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symb ol
Parameter
POUT f = 945 MHz VDD = 28V
IDQ = 250 mA
IMD3 VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
GPS VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
ηD VDD = 28 V Pout = 45 W PEP IDQ = 250 mA
Load f = 945 MHz VDD = 28 V
Mismatch ALL PHASE ANGLES
Note: f1 = 945.0 MHz
f2 = 945.1 MHz
Pout = 45 W IDQ = 250 mA
IMPEDANCE DATA
Min.
65
2.5
2.0
Typ .
0.7
2.7
80
40
3.2
M a x.
1
1
5.0
0.9
Un it
V
µA
µA
V
V
mho
pF
pF
pF
REF. 7133620B
Min.
45
13
33
10:1
Typ .
-32
15
40
M a x.
-28
Un it
W
dBc
dB
%
VSWR
FREQ .
925 MHz
930 MHz
945 MHz
960 MHz
965 MHz
ZIN ()
1.27 + j 0.82
1.21 + j 0.79
1.04 + j 0.71
0.93 + j 0.43
0.91 + j 0.41
ZDL ()
2.22 - j 1.63
2.24 - j 1.61
2.30 - j 1.52
2.37 - j 1.37
2.43 - j 1.36
2/11



ST Microelectronics SD57045
TYPICAL PERFORMANCE
Capacitance vs Drain-Source Voltage
SD57045
Gate-Source Voltage vs Case Temperature
Drain Current vs Gate Voltage
DC Maximum Safe Operating Area
Maximum Thermal Resistance vs Case
Temperature
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