POWER TRANSISTOR. SD57030 Datasheet

SD57030 TRANSISTOR. Datasheet pdf. Equivalent

SD57030 Datasheet
Recommendation SD57030 Datasheet
Part SD57030
Description RF POWER TRANSISTOR
Feature SD57030; SD57030 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLE.
Manufacture ST Microelectronics
Datasheet
Download SD57030 Datasheet





ST Microelectronics SD57030
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
SD57030
RF POWER TRANSISTORS
The LdmoST FAMILY
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 30 W WITH 13 dB gain @ 945 MHz
BeO FREE PACKAGE
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS = 1 MΩ)
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
March, 24 2003
1. Drain
2. Gate
2
3. Source
Value
65
65
+ 20
4
74
200
-65 to + 200
Unit
V
V
V
A
W
°C
°C
1.75
°C/W
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ST Microelectronics SD57030
SD57030
ELECTRICAL SPECIFICATION (TCASE = 25°C)
STATIC
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
GFS
CISS*
COSS
CRSS
VGS = 0 V
VGS = 0 V
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test Conditions
IDS = 10 mA
VDS = 28 V
VDS = 0 V
ID = 50 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DYNAMIC
Symbol
POUT
GPS
ηD
Load
mismatch
Test Conditions
VDD = 28 V IDQ = 50 mA
VDD = 28 V IDQ = 50 mA POUT = 30 W
VDD = 28 V IDQ = 50 mA POUT = 30 W
VDD = 28 V IDQ = 50 mA POUT = 28 W
ALL PHASE ANGLES
f = 945 MHz
f = 945 MHz
f = 945 MHz
f = 945 MHz
Min.
65
2.0
Typ.
1.3
1.8
58
34
2.7
Max.
1
1
5.0
Unit
V
µA
µA
V
V
mho
pF
pF
pF
Ref. 7143417B
Min.
30
13
50
10:1
Typ.
15
60
Max.
Unit
W
dB
%
VSWR
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ST Microelectronics SD57030
TYPICAL PERFORMANCE (CW)
Output Power vs. Input Power
SD57030
Power Gain and Efficiency vs. Output Power
40
30
20
10
0
0
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
0.2 0.4 0.6 0.8
1
Pin, INPUT POW ER (W )
1.2 1.4
21
18
15
12
9
6
3
0
0
70
Gain
60
Eff
50
40
30
20
f= 945 MHz
Vdd= 28 V 10
Idq= 50 mA
0
5 10 15 20 25 30 35 40
Pout, OUTPUT POWER (W)
Output Power vs. Gate Source Voltage
Output Power vs. Supply Voltage
35
f= 945 MHz
30 Vdd= 28 V
Idq= 50 mA
25
20
15
10
5
0
-5 -4 -3 -2 -1 0 1 2 3 4
Vgs, GATE-SOURCE VOLTAGE (V)
35
30
25
20
15
10
5
0
8
f= 945 MHz
Idq= 50 mA
Pin= .84 W
Pin= .47 W
Pin= .24 W
12 16 20 24
VDD, SUPPLY VOLTAGE (V)
28
32
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