SPA15N60C3

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID Periodic avalanche rated PG-TO220FP PG-TO262 Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω 15 A PG-TO220 Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=7.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 15 151) 9.4 9.41) 45 45 460 460 Unit A A mJ 0.8 0.8 15 15 ±20 ±20 ±30 ±30 156 34 -55...+150 15 A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junctio...