SPB07N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPB07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO263 Type SPB07N60S5 Package PG-TO263 Ordering Code Q67040-S4185 Marking 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = - A, VDD = 50 V EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 ±20 ±30 83 -55... +150 Unit A mJ A V W °C Rev. 2.3 Page 1 2005-07-21 SPB07N60S5 Maximum Ratings Parameter Dra...