Document
SPP100N04S2-04 SPB100N04S2-04 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
40 3.3 100
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP100N04S2-04 SPB100N04S2-04
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6040 Q67060-S6041
Marking PN0404 PN0404
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 100 100
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot T j , Tstg
400 810 6 ±20 300 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25Ω
Reverse diode d v/dt
IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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SPP100N04S2-04 SPB100N04S2-04
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 40 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID =250µA
Zero gate voltage drain current
V DS=40V, VGS=0V, Tj=25°C V DS=40V, VGS=0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA mΩ 2.9 2.6 3.6 3.3
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 210A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
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SPP100N04S2-04 SPB100N04S2-04
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =32V, ID =100A, VGS =0 to 10V VDD =32V, ID =100A
Symbol
Conditions min.
Values typ. 146 5430 1915 400 22 54 63 53 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz
73 -
S
7220 pF 2550 600 33 80 95 80 ns
VDD =20V, VGS =10V, ID =100A, RG =2.2Ω
-
28 53 129 5.2
37 80 172 -
nC
V(plateau) VDD =32V, ID =100A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =80A VR =20V, IF =lS , diF /dt=100A/µs
IS
TC=25°C
-
0.9 66 153
100 400 1.3 80 190
A
V ns nC
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SPP100N04S2-04 SPB100N04S2-04
1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V
320
SPP100N04S2-04
2 Drain current ID = f (T C) parameter: VGS≥ 10 V
110
SPP100N04S2-04
W
A
90
240
80
P tot
200
ID
100 120 140 160 °C 190
70 60
160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10
3 SPP100N04S2-04 t = 29.0µs p
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPP100N04S2-04
K/W
/I
D
A
= V
10
100 µs
0
DS (on )
DS
10
ID
R
2
Z thJC
1 ms
10
-1
10
-2
D = 0.50 0.20 10
1 -3
10
0.10 0.05 0.02
10
-4
single pulse
0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
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tp
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SPP100N04S2-04 SPB100N04S2-04
5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
240
SPP100N04S2-04
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
12
SPP100N04S2-04
Ptot = 300W
l k
V [V] GS a b
A
200 180 160
4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 10.0
mΩ
10
f
g
h
i
j
d e
R DS(on)
j c
9 8 7 6 5 4 3 2
l k
ID
140 120
i
f g
h
h i j
100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5
e d c a b g
k l
f
VGS [V] =
1 4
f 5.0
g 5.2
h i 5.4 5.6
j 5.8
k l 6.0 10.0
V
0 5 0 20 40 60
80 100 120 140 160 A
200
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
200
8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs
200
A
160 140 120 100 80 60 40 20 0 0 1 2 3 4
S
160 140
g fs V VGS
ID
120 100 80 60 40 20 0
6
0
20
40
60
80 100 120 140 160
A 200 ID
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SPP100N04S2-04 SPB100N04S2-04
9 Drain-source on-state resistance RDS(on) = f (Tj.