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SPB100N04S2-04 Dataheets PDF



Part Number SPB100N04S2-04
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB100N04S2-04 DatasheetSPB100N04S2-04 Datasheet (PDF)

SPP100N04S2-04 SPB100N04S2-04 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 40 3.3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N04S2-04 SPB100N04S2-04 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6040 Q67060-S6041 Marking PN0404 PN0404 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=.

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SPP100N04S2-04 SPB100N04S2-04 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 40 3.3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N04S2-04 SPB100N04S2-04 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6040 Q67060-S6041 Marking PN0404 PN0404 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot T j , Tstg 400 810 6 ±20 300 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID=80 , VDD=25V, RGS=25Ω Reverse diode d v/dt IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-08 SPP100N04S2-04 SPB100N04S2-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 40 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID =250µA Zero gate voltage drain current V DS=40V, VGS=0V, Tj=25°C V DS=40V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 2.9 2.6 3.6 3.3 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 210A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-08 SPP100N04S2-04 SPB100N04S2-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =32V, ID =100A, VGS =0 to 10V VDD =32V, ID =100A Symbol Conditions min. Values typ. 146 5430 1915 400 22 54 63 53 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =100A VGS =0V, VDS =25V, f=1MHz 73 - S 7220 pF 2550 600 33 80 95 80 ns VDD =20V, VGS =10V, ID =100A, RG =2.2Ω - 28 53 129 5.2 37 80 172 - nC V(plateau) VDD =32V, ID =100A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =20V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 66 153 100 400 1.3 80 190 A V ns nC Page 3 2003-05-08 SPP100N04S2-04 SPB100N04S2-04 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 320 SPP100N04S2-04 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 110 SPP100N04S2-04 W A 90 240 80 P tot 200 ID 100 120 140 160 °C 190 70 60 160 50 120 40 30 20 40 10 0 0 20 40 60 80 0 0 20 40 60 80 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP100N04S2-04 t = 29.0µs p 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP100N04S2-04 K/W /I D A = V 10 100 µs 0 DS (on ) DS 10 ID R 2 Z thJC 1 ms 10 -1 10 -2 D = 0.50 0.20 10 1 -3 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-08 SPP100N04S2-04 SPB100N04S2-04 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 240 SPP100N04S2-04 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 12 SPP100N04S2-04 Ptot = 300W l k V [V] GS a b A 200 180 160 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 10.0 mΩ 10 f g h i j d e R DS(on) j c 9 8 7 6 5 4 3 2 l k ID 140 120 i f g h h i j 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 e d c a b g k l f VGS [V] = 1 4 f 5.0 g 5.2 h i 5.4 5.6 j 5.8 k l 6.0 10.0 V 0 5 0 20 40 60 80 100 120 140 160 A 200 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 200 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 200 A 160 140 120 100 80 60 40 20 0 0 1 2 3 4 S 160 140 g fs V VGS ID 120 100 80 60 40 20 0 6 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2003-05-08 SPP100N04S2-04 SPB100N04S2-04 9 Drain-source on-state resistance RDS(on) = f (Tj.


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