SPB17N80C3

CoolMOS® Power Transistor Features new revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPB17N80C3 800 V 0.29 Ω 91 nC PG-TO263 CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type SPB17N80C3 Package PG-TO263 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=50 V I D=17 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Rev. 2.5 page 1 Value 17 11 51 670 0.5 17 50 ±20 ±30 227 -55 ... 150 Unit A mJ A V/ns V W °C 2011-09-27 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) IS I S,pulse dv /dt T C=25 °C SPB17N80C3 Value 17 51 4 Unit A V/ns Parameter Thermal characteristics Thermal res...