SPB42N03S2L-13

SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 OptiMOS® Power-Transistor Features N-channel Enhancement mode Logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Avalanche rated dv /dt rated P-TO262-3-1 Product Summary V DS R DS(on),max ID 30 12.9 42 V mΩ A P-TO263-3-2 P-TO220-3-1 Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4034 Q67042-S4035 Q67042-S4104 Marking 2N03L13 2N03L13 2N03L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Repetitive avalanche energy Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=42 A, R GS=25 Ω limited by T jmax 2) I D=42 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Value 42 42 248 110 8 6 ±20 83 -55 ... 175 55/175/56 mJ mJ kV/µs V W °C Unit A Rev. 2.0 page 1 2004-06-04 SPI42N03S2L-13 SPP42N03S2L-13 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate th...