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SPB80N06S2-05 Dataheets PDF



Part Number SPB80N06S2-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB80N06S2-05 DatasheetSPB80N06S2-05 Datasheet (PDF)

SPP80N06S2-05 SPB80N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-05 SPB80N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4245 Q67040-S4255 Marking 2N0605 2N0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C .

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SPP80N06S2-05 SPB80N06S2-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-05 SPB80N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4245 Q67040-S4255 Marking 2N0605 2N0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=250µA Zero gate voltage drain current V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C µA 0.01 1 1 1 100 100 nA mΩ 4.1 3.8 5.1 4.8 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance4) V GS=10V, I D=80A V GS=10V, I D=80A, SMD version 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 170A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =44V, ID =80A, VGS =0 to 10V VDD =44V, ID =80A Symbol Conditions min. Values typ. 132 5110 1330 280 18 21 54 20 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 66 - S 6790 pF 1760 430 27 31 80 30 ns VDD =30V, VGS =10V, ID =80A, RG =2.2Ω - 27 53 130 5.2 36 80 170 - nC V(plateau) VDD =44V, ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=80A V R=30V, I F=lS, diF/dt=100A/µs IS TC=25°C - 0.9 60 130 80 320 1.3 75 160 A V ns nC Page 3 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 320 SPP80N06S2-05 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N06S2-05 W A 70 240 P tot 60 200 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190 160 120 80 40 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 10 3 SPP80N06S2-05 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N06S2-05 K/W A /I D t = 26.0µs p 10 0 = V DS ID R DS (on ) 10 2 Z thJC 100 µs 10 -1 10 1 ms -2 D = 0.50 0.20 -3 10 1 10 0.10 0.05 0.02 10 -4 single pulse 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 190 SPP80N06S2-05 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 17 SPP80N06S2-05 Ptot = 300W i h g f e VGS [V] a b 4.5 5.0 5.3 5.5 5.8 6.0 6.8 9.3 10.0 A 160 140 mΩ 14 e f c d R DS(on) 12 ID 120 100 c d e f g h i 10 g 8 6 h 80 60 b 40 20 a 4 2 VGS [V] = e 5.8 f 6.0 i g 6.8 h i 9.3 10.0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 5 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 160 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 170 A S 140 120 120 ID 100 g fs 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 80 60 40 20 0 0 1 2 3 4 5 7 V VGS A 200 ID Page 5 2003-04-24 SPP80N06S2-05 SPB80N06S2-05 9 Drain-.


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