Document
SPP80N06S2-05 SPB80N06S2-05 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
55 4.8 80
P- TO220 -3-1
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPP80N06S2-05 SPB80N06S2-05
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67040-S4245 Q67040-S4255
Marking 2N0605 2N0605
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 80 80
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
320 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=80 A , V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt
IS=80A, VDS=44V, di/dt=200A/µs, T jmax=175°C
Gate source voltage Power dissipation
TC=25
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-04-24
SPP80N06S2-05 SPB80N06S2-05
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID=250µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 1 100 100 nA mΩ 4.1 3.8 5.1 4.8
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance4)
V GS=10V, I D=80A V GS=10V, I D=80A, SMD version
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 170A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2
2003-04-24
SPP80N06S2-05 SPB80N06S2-05
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =44V, ID =80A, VGS =0 to 10V VDD =44V, ID =80A
Symbol
Conditions min.
Values typ. 132 5110 1330 280 18 21 54 20 max. -
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz
66 -
S
6790 pF 1760 430 27 31 80 30 ns
VDD =30V, VGS =10V, ID =80A, RG =2.2Ω
-
27 53 130 5.2
36 80 170 -
nC
V(plateau) VDD =44V, ID =80A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
V GS=0V, IF=80A V R=30V, I F=lS, diF/dt=100A/µs
IS
TC=25°C
-
0.9 60 130
80 320 1.3 75 160
A
V ns nC
Page 3
2003-04-24
SPP80N06S2-05 SPB80N06S2-05
1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V
320
SPP80N06S2-05
2 Drain current ID = f (T C) parameter: VGS≥ 10 V
90
SPP80N06S2-05
W
A
70 240
P tot
60 200
ID
50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190
160
120
80
40
0 0 20 40 60 80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25
10
3 SPP80N06S2-05
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPP80N06S2-05
K/W A
/I
D
t = 26.0µs p
10
0
=
V
DS
ID
R
DS (on )
10
2
Z thJC
100 µs
10
-1
10
1 ms
-2
D = 0.50 0.20
-3
10
1
10
0.10 0.05 0.02
10
-4
single pulse
0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-5
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2003-04-24
SPP80N06S2-05 SPB80N06S2-05
5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
190
SPP80N06S2-05
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
17
SPP80N06S2-05
Ptot = 300W
i h g f e
VGS [V] a b 4.5 5.0 5.3 5.5 5.8 6.0 6.8 9.3 10.0
A
160 140
mΩ
14
e
f
c d
R DS(on)
12
ID
120 100
c
d
e f g h i
10
g
8 6
h
80 60
b
40 20
a
4 2 VGS [V] =
e 5.8 f 6.0
i
g 6.8
h i 9.3 10.0
0 0 0.5 1 1.5 2 2.5 3 3.5 4
V
0 5 0 20 40 60 80 100
A
140
VDS
ID
7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
160
8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs
170
A
S
140
120 120
ID
100
g fs
100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
80
60
40
20
0 0 1 2 3 4 5
7 V VGS
A 200 ID
Page 5
2003-04-24
SPP80N06S2-05 SPB80N06S2-05
9 Drain-.