SPD06N80C3
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High...
SPD06N80C3
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC for target applications
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
800 V 0.9 W 31 nC
Pb-free lead plating; RoHS compliant; Halogen free mold compound
Ultra low gate charge Ultra low effective capacitances
PG-TO252-3
CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward )
Type SPD06N80C3
Package PG-TO252-3
Marking 06N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T A=25 °C
Pulsed drain current2)
I D,pulse
T A=100 °C T A=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
I D=1.2 A, V DD=50 V I D=6 A, V DD=50 V
V DS=0…640 V
Gate source voltage
V GS
static
AC (f >1 Hz)
Power dissipation
P tot
T A=25 °C
Operating and storage temperature T j, T stg
Value 6 3.8 18
230 0.2 6 50 ±20 ±30 83 -55 ... 150
Unit A
mJ
A V/ns V
W °C
Rev. 2.94
page 1
2020-05-10
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
IS I S,pulse dv /dt
T A=25 °C
SPD06N80C3
Value 6 18 4
Unit A
V/ns
Para...
