Document
SPD25N06S2-40 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS R DS(on) ID 55 40 29
P- TO252 -3-11
V mΩ A
• Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
Type SPD25N06S2-40
Package Ordering Code P- TO252 -3-11 Q67060-S7427
Marking 2N0640
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C
Symbol ID
Value 29 20
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot T j , Tstg
116 80 6.8 6 ±20 68 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID=25A, V DD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax 1) Reverse diode d v/dt
IS=25A, V DS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
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SPD25N06S2-40
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. RthJC RthJA RthJA -
Values typ. 1.45 max. 2.2 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 55 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID=26µA
Zero gate voltage drain current
V DS=55V, VGS=0V, Tj=25°C V DS=55V, VGS=0V, Tj=125°C
µA 0.01 1 1 30 1 100 100 40 nA mΩ
Gate-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=10V, I D=13A
1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2003-05-09
SPD25N06S2-40
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =44V, ID =25A, VGS =0 to 10V VDD =44V, ID =25A
Symbol
Conditions min.
Values typ. 17 534 138 40 8.8 24 24 23 max. 710 180 60 13 36 36 35
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
VDS ≥2*ID *RDS(on)max, ID =20A VGS =0V, VDS =25V, f=1MHz
8.5 -
S pF
VDD =30V, VGS =10V, ID =25A, RG =22Ω
ns
-
3 6 13 5.7
4 8 18 -
nC
V(plateau) VDD =44V, ID =25A
V
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr
VGS =0V, IF =25A VR =30V, IF =lS , diF /dt=100A/µs
IS
TC=25°C
-
0.9 31 40
29 116 1.3 40 50
A
V ns nC
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SPD25N06S2-40
1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V
SPD25N06S2-40
2 Drain current ID = f (T C) parameter: VGS≥ 10 V
32
SPD25N06S2-40
75
W A
60 55 24
P tot
50
ID
100 120 140 160 °C 190
45 40 35 30 25 20 15 10 5 0 0 20 40 60 80
20
16
12
8
4
0 0 20 40 60 80
100 120 140 160 °C 190
TC
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10
3 SPD25N06S2-40
4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T
10
1 SPD25N06S2-40
K/W A
10
/I
D DS
0
t = 7.5µs p 10 µs
ID
=
10
V
2
DS (on )
Z thJC
10
-1
R
D = 0.50 10
100 µs -2
0.20 0.10 0.05
10
1
10
1 ms
-3
single pulse
0.02 0.01
10
0
10
-1
10
0
10
1
V
10
2
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
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tp
2003-05-09
SPD25N06S2-40
5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs
60
6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS
120
Vgs = 7.5V
A
50
Vgs = 10V
mΩ
100
Vgs = 7V
R DS(on)
45
90 80 70 60
ID
40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3
Vgs = 6.5V
Vgs = 6V
Vgs=5V Vgs=5.5V Vgs=6V Vgs=6.5V Vgs=7V Vgs=7.5V Vgs=10V
Vgs = 5.5V
50 40 30 20 0 10 20 30 40
Vgs = 5V Vgs = 4.5V
3.5
4
V 5 VDS
A ID
60
7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs
50
8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs
20
A
40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6
S
16 14
g fs V 8 VGS
ID
12 10 8 6 4 2 0 0 4 8 12 16 20 24
A 32 ID
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SPD25N06S2-40
9 Drain-source on-resistance RDS(on) = f(Tj) parameter: ID = 13 A, VGS = 10 V
90
10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS
4
mΩ V
70
R DS(on)
V GS(th)
60
130 µA
3
98 %
50 40 30 20 10 0 -60
26 µA typ.
2.5
2
-20
20
60
100
°C Tj
180
1.5 -60
-20
20
60
100
°C Tj
180
11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz
10
4
12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs
10
3 SPD25N06S2-40
pF
A
10
3
Ciss IF Coss
10
2
C
.