Document
OptiMOS&!Power-Transistor
Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated
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SPD50N03S2-07 G
Product Summary
VDS
30 V
RDS(on) 7.3 m"
ID
50 A
Ph-TO252-3
Type
Package
SPD50N03S2-07 L Ph-TO252-3
Marking PN0307
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=50 A , VDD=25V, RGS=25"
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS EAR dv/dt
VGS Ptot
Tj , Tstg
Value
50 50 200
250
13 6
±20 136
-55... +175 55/175/56
Unit A
mJ
kV/µs V W °C
Page 1
QS-0Z-2008
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD50N03S2-07 G
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
-
0.7 1.1 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=85µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, I D=50A
V(BR)DSS 30
-
-V
VGS(th)
2.1
3
4
IDSS IGSS
µA
- 0.01 1
-
1 100
-
1 100 nA
RDS(on)
-
5.7 7.3 m"
1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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Electrical Characteristics Parameter
Dynamic Characteristics Transconductance
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total
Gate plateau voltage
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge
SPD50N03S2-07 G
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss Coss Crss td(on) tr td(off) tf
VDS$2*ID*RDS(on)max, 30
ID =50A
VGS=0V, VDS =25V,
-
f=1MHz
-
-
VDD=15V, VGS =10V,
-
ID =50A,
-
RG=6.8"
-
-
60 - S
1630 2170 pF 750 1000 150 230 14 21 ns 36 54 27 40 25 38
Qgs
VDD=24V, ID =50A
Qgd
Qg
VDD=24V, ID =50A,
VGS=0 to 10V
V(plateau) VDD=24V, ID =50A
- 7.9 10.5 nC
- 14.1 21.1
-
35 46.5
- 5.2 - V
IS
ISM VSD trr Qrr
TC=25°C
VGS=0V, IF=50A VR=15V, IF=lS, diF/dt=100A/µs
-
- 50 A
-
- 200
- 0.9 1.3 V
- 41 51 ns
- 46 58 nC
Page 3
QS-0Z-2008
ID ZthJC
P tot ID
1 Power dissipation
Ptot = f (TC)
parameter: VGS$ 6 V
SPD50N03S2-07
150 W
120 110 100
90 80 70 60 50 40 30 20 10
0 0 20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C
10 3 SPD50N03S2-07
A 10 2
tp = 7.6µs 10 µs
100 µs
10 1
1 ms
SPD50N03S2-07 G
2 Drain current ID = f (TC) parameter: VGS$ 10 V
SPD50N03S2-07
55 A
45 40 35 30 25 20 15 10
5 0
0 20 40 60 80 100 120 140 160 °C 190 TC
4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T
10 1 SPD50N03S2-07 K/W
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50 0.20 0.10 0.05 0.02 0.01
10 0 10 -1
10 0
10 1
V
10 2
VDS
Page 4
10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
s 10 0
tp
QS-0Z-2008
SPD50N03S2-07 G
5 Typ. output characteristic
ID
ID = f (VDS); Tj=25°C parameter: tp = 80 µs
SPD50N03S2-07
120 Ptot = 136W A
i
100
90
80
70
60
50
40
30
VGS [V]
a
4.2
b
4.5
c
4.8
hd
5.0
e
5.2
f
5.5
gg
5.8
h
6.0
i
10.0
f
e
20
d
10
c
b
0
a
0
1
2
3
4 V 5.5
VDS
7 Typ. transfer characteristics ID= f ( VGS ); VDS$ 2 x ID x RDS(on)max parameter: tp = 80 µs
100
A
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPD50N03S2-07
24
m"
e
f
g
h
R DS(on)
20
18
16
14
12
10
8
6
i
4
VGS [V] =
2ef ghi
5.2 5.5 5.8 6.0 10.0
0 0 10 20 30 40 50 60 70 80 A 100
ID
8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs
80
S
80 60
70
50 60
g fs
ID
50
40
40 30
30 20
20
10 10
0
0
1
2
3
4
5 V 6.5
VGS
0
0
20
40
60
80
A
120
ID
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9 Drain-source on-state resistance
RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V
SPD50N03S2-07
17
.