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SPD50N03S2-07 Dataheets PDF



Part Number SPD50N03S2-07
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet SPD50N03S2-07 DatasheetSPD50N03S2-07 Datasheet (PDF)

OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U g2kwj j qj fi uqfynsl@W tM X htruqnfsy SPD50N03S2-07 G Product Summary VDS 30 V RDS(on) 7.3 m" ID 50 A Ph-TO252-3 Type Package SPD50N03S2-07 L Ph-TO252-3 Marking PN0307 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID.

  SPD50N03S2-07   SPD50N03S2-07


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OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U g2kwj j qj fi uqfynsl@W tM X htruqnfsy SPD50N03S2-07 G Product Summary VDS 30 V RDS(on) 7.3 m" ID 50 A Ph-TO252-3 Type Package SPD50N03S2-07 L Ph-TO252-3 Marking PN0307 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=50 A , VDD=25V, RGS=25" Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 50 50 200 250 13 6 ±20 136 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 QS-0Z-2008 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPD50N03S2-07 G Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 0.7 1.1 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID=85µA Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=10V, I D=50A V(BR)DSS 30 - -V VGS(th) 2.1 3 4 IDSS IGSS µA - 0.01 1 - 1 100 - 1 100 nA RDS(on) - 5.7 7.3 m" 1Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 106A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 QS-0Z-2008 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPD50N03S2-07 G Symbol Conditions Values Unit min. typ. max. gfs Ciss Coss Crss td(on) tr td(off) tf VDS$2*ID*RDS(on)max, 30 ID =50A VGS=0V, VDS =25V, - f=1MHz - - VDD=15V, VGS =10V, - ID =50A, - RG=6.8" - - 60 - S 1630 2170 pF 750 1000 150 230 14 21 ns 36 54 27 40 25 38 Qgs VDD=24V, ID =50A Qgd Qg VDD=24V, ID =50A, VGS=0 to 10V V(plateau) VDD=24V, ID =50A - 7.9 10.5 nC - 14.1 21.1 - 35 46.5 - 5.2 - V IS ISM VSD trr Qrr TC=25°C VGS=0V, IF=50A VR=15V, IF=lS, diF/dt=100A/µs - - 50 A - - 200 - 0.9 1.3 V - 41 51 ns - 46 58 nC Page 3 QS-0Z-2008 ID ZthJC P tot ID 1 Power dissipation Ptot = f (TC) parameter: VGS$ 6 V SPD50N03S2-07 150 W 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPD50N03S2-07 A 10 2 tp = 7.6µs 10 µs 100 µs 10 1 1 ms SPD50N03S2-07 G 2 Drain current ID = f (TC) parameter: VGS$ 10 V SPD50N03S2-07 55 A 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 °C 190 TC 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 1 SPD50N03S2-07 K/W 10 0 10 -1 10 -2 10 -3 single pulse D = 0.50 0.20 0.10 0.05 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 VDS Page 4 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp QS-0Z-2008 SPD50N03S2-07 G 5 Typ. output characteristic ID ID = f (VDS); Tj=25°C parameter: tp = 80 µs SPD50N03S2-07 120 Ptot = 136W A i 100 90 80 70 60 50 40 30 VGS [V] a 4.2 b 4.5 c 4.8 hd 5.0 e 5.2 f 5.5 gg 5.8 h 6.0 i 10.0 f e 20 d 10 c b 0 a 0 1 2 3 4 V 5.5 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS$ 2 x ID x RDS(on)max parameter: tp = 80 µs 100 A 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS SPD50N03S2-07 24 m" e f g h R DS(on) 20 18 16 14 12 10 8 6 i 4 VGS [V] = 2ef ghi 5.2 5.5 5.8 6.0 10.0 0 0 10 20 30 40 50 60 70 80 A 100 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 80 S 80 60 70 50 60 g fs ID 50 40 40 30 30 20 20 10 10 0 0 1 2 3 4 5 V 6.5 VGS 0 0 20 40 60 80 A 120 ID Page 5 QS-0Z-2008 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 50 A, VGS = 10 V SPD50N03S2-07 17 .


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