Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance
SPP11N65C3,SPA11N65C3 SPI11N65C3
PG-TO262
V DS RDS(on)
ID
650 V 0.38 Ω 11 A
PG-TO220FP PG-TO220
Type SPP11N65C3 SPA11N65C3 SPI11N65C3
Package PG-TO220 PG-TO220FP PG-TO262
Ordering Code Q67040-S4557 SP000216318 Q67040-S4561
Marking 11N65C3 11N65C3 11N65C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.5A, VDD=50V
Avalanche
energy,
repetitive
tAR
limited
by
T
2) jmax
ID=4A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg
Value SPP_I SPA
11
111)
7
71)
33
33
340
340
Unit A
A mJ
0.6
0.6
4
4
A
±20
±20 V
±30
±30
125
33 W
-55...+150
°C
Rev. 2.91
Page 1
2009-11-30
SPP11N65C3,SPA11N65C3 SPI11N65C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 c...