Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / ...
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
PNP SILICON EPITAXIAL POWER
TRANSISTOR
CSB1370 (9AW) TO-220
MARKING : AS BELOW
Designed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=2A,IB=0.2A Collector Emitter Saturation Voltage VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=5V DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=5MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120; CSB 1370 D E : 100 -200 CSB 1370 E VALUE 60 60 5.0 3.0 6.0 2.0 30 150 -55 to +150 MIN 60 60 5.0 60 TYP 15 80 MAX 10 10 1.5 1.5 320 UNIT V V V A A W W deg C deg C UNIT V V V uA uA V V
MHz pF
F : 160 -320 CSB 1370 F
Continental Device India Limited
Data Sheet
Page 1 of 3
TO-220 Plastic Package
C E
D IM A B C D ...