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CSB1370 Datasheet, Equivalent, Power Transistor.PNP Silicon Epitaxial Power Transistor PNP Silicon Epitaxial Power Transistor |
| Part | CSB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg . |
| Manufacture | Continental Device |
| Datasheet |
| Part | CSB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg . |
| Manufacture | Continental Device |
| Datasheet |
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