Epitaxial Transistor. A1013 Datasheet

A1013 Transistor. Datasheet pdf. Equivalent

A1013 Datasheet
Recommendation A1013 Datasheet
Part A1013
Description Silicon PNP Epitaxial Transistor
Feature A1013; A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B.
Manufacture Shanghai
Datasheet
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Shanghai A1013
A1013
A1013 Silicon PNP Epitaxial Transistor
Description :The A1013 is designed for color TV class B sound output applications
Features: High voltage: VCEO=160V
Complementary to C2383
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
1100um×1100um
210±20um
Base 240um×240um
Emitter 330um×260um
Al
Au
60um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Min
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=-150V, IE=0
VEB=-6V, IC=0
IC=-0.1mA
IC=-10mA
IE=-0.1mA
VCE=-5V, IC=-200mA
-160
-160
-6.0
60
Collector Saturation Voltage
VCE(sat) IC=-500mA, IB=-50mA
Max
-1.0
-1.0
320
-1.5
Unit
uA
uA
V
V
V
V
May. 2004
Version :0.0
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