IRFP9140

IRFP9140 Data Sheet July 1999 File Number 2292.4 19A, 100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17521. Features 19A, 100V rDS(ON) = 0.200Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Symbol D Ordering Information PART NUMBER IRFP9140 PACKAGE TO-247 BRAND G IRFP9140 S NOTE: When ordering, use the entire part number. Packaging JEDEC STYLE T0-247 SOURCE DRAIN GATE DRAIN (FLANGE) 4-57 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFP9140 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP9140 -100 -100 -19 -12 -76 ±20 150 1.2 960 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...