TARF1502U

TARF1502U NPN Planer RF TRANSISTOR DESCRIPTION The TARF1502U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package FEATURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=3V, Ic=5mA N.F = 1.5dB TYP. @ f=2GHz, VCE=3V, Ic=5mA o High Gain MSG = 17.5dB TYP. @ f=1GHz, VCE=3V, Ic=15mA MAG = 11.5dB TYP. @ f=2GHz, VCE=3V, Ic=15mA o High Transition Frequency fT = 12GHz TYP. @ f=2GHz, VCE=3V, Ic=15mA PIN CONFIGURATION PIN NO 1 2 3 SYMBOL B E C DESCRIPTION Base Emitter Collector MARKING : AC1 MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 CONDITION Open Emitter Open Base Open Collector VALUE 25 12 2.5 35 150 -65 ~ 150 150 Unit V V V mA mW www.tachyonics.co.kr - 1/12 - Sep-2002 TARF1502U Electrical Characteristics ( TA = 25 SYMBOL VCBO VCEO ICBO IEBO hfe PARAMETER Collector-Base Voltage ) CONDITION VALUE 20 12 25 14 300 100 100 150 12 0.47 GHz pF Unit V V nA nA ICE = 100uA, IE = 0 Collector-Emitter Voltage ICE = 100uA, IB = 0 Collector-Cut-off current Emitter-Cut-off current D.C current Gain Transition Frequency VCB = 10V, IE = 0 VEB = 1V, IC = 0 VCE = 3V, Ic = 15mA VCE = 3V, Ic = 15mA fT CCB Collector-Base Capacitance VCB = 10V, f = 1MHz Performance Cha...