STK596EF

Semiconductor STK596EF N-Channel Junction FET Description Capacitor Microphone application Features Especially suited for use in audio, telephone capacitor microphones Excellent voltage characteristic Excellent transient characteristic Ordering Information Type NO. STK596EF Marking J□ □:IDSS Rank Package Code SOT-523F Outline Dimensions unit : mm 1.60±0.1 0.88±0.1 1 1.60±0.1 1.00±0.1 3 2 0.25~0.30 +0.1 0.68 -0.05 0~0.1 0.11±0.05 PIN Connections 1. Drain 2. Source 3. Gate KST-4018-001 1 STK596EF Absolute maximum ratings Characteristic Gate-Drain voltage Gate Current Drain Current Power dissipation Junction Temperature Storage Temperature range (Ta=25°C) Symbol VGDO IG ID PD TJ Tstg Rating -20 10 1 100 150 -55~150 Unit V mA mA mW °C °C Electrical Characteristics Characteristic Gate-drain breakdown voltage Cutoff voltage Zero Voltage Drain current Forward transfer admittance Input capacitance Reverse Transfer capacitance Output Noise Voltage (Ta=25°C) Symbol V(BR)GDO VGS(off) IDSS ｜yfs｜ Ciss Crss VNO Test Condition IG=-100µA VDS=5V, ID=1 ㎂ VDS=5V, VGS=0 VDS=5V, VGS=0, f=1KHz VDS=5V, VGS=0, f=1MHz VDS=5V, VGS=0, f=1MHz VIN=０, A CURVE Min. Typ. Max. -20 -0.6 100 0.4 1.2 3.5 0.65 -１１０ -1.5 800 Unit V V µA mS pF pF dB IDSS Classification Classification IDSS[㎂] A 100 ~ 170 B 150 ~ 240 C 210 ~ 350 D 320 ~ 480 E 440 ~ 800 Noise Voltage Test Circuit VCC＝＋４．５V 1kΩ Cin=15p JIS A V VTVM KST-4018-001 2 STK596EF Electrical Characteristic Curves Fig....