Infrared Light Emitting Diode / Top View Type
SIR-341ST3F
Sensors
Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light e...
Description
SIR-341ST3F
Sensors
Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment.
!Applications Optical control equipment Light source for remote control devices
!External dimensions (Units : mm)
φ3.8±0.3 φ3.5 φ3.1±0.2 Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference.
!Features 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability.
2−
0.5
Min.24
1
(2.5)
2.5±1
2
Max.1
4−0.6
5.2±0.3
1.1
1 Anode
2 Cathode
!Absolute maximum ratings (Ta = 25°C)
Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
Symbol IF VR PD IFP∗ Topr Tstg
Limits 75 5 100 1.0 −25~+85 −40~+85
Unit mA V mW A °C °C
1/3
SIR-341ST3F
Sensors
!Electrical and optical characteristics (Ta = 25°C)
Parameter Optical output Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Pesponse time Cut-off...
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