DatasheetsPDF.com

SSM9915H Dataheets PDF



Part Number SSM9915H
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-Channel Enhancement-Mode Power MOSFET
Datasheet SSM9915H DatasheetSSM9915H Datasheet (PDF)

www.DataSheet4U.com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D BV DSS R DS(ON) ID 20V 50mΩ 20A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25.

  SSM9915H   SSM9915H


Document
www.DataSheet4U.com SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D BV DSS R DS(ON) ID 20V 50mΩ 20A Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 20 ± 10 20 16 41 26 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ DataShee DataSheet4U.com Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W DataSheet4U.com Rev.2.01 6/26/2003 www.SiliconStandard.com 1 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM9915H,J Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50 Max. Units 50 80 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 10V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.3Ω,VGS=5V RD=1Ω VGS=0V DataSheet4U.com VDS=20V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 et4U.com DataShee Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V Tj=25℃, IS=20A, VGS=0V Min. - Typ. - Max. Units 20 41 1.3 A A V Pulsed Source Current ( Body Diode ) 1 Forward On Voltage 2 Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. DataSheet4U.com Rev.2.01 6/26/2003 www.SiliconStandard.com 2 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM9915H,J 50 40 T C =25 o C 40 V G =4.5V 30 T C =150 o C V G =4.5V ID , Drain Current (A) 30 ID , Drain Current (A) V G =3.5V V G =3.5V 20 20 V G =2.5V 10 V G =2.5V 10 V G =1.5V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 V G =1.5V 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics et4U.com DataShee DataSheet4U.com 60 1.8 I D= 6 A T C =25 C Normalized R DS(ON) 50 I D =6A 1.6 o V G =4.5V 1.4 RDSON (mΩ ) 1.2 40 1.0 0.8 30 0.6 1 2 3 4 5 6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature DataSheet4U.com Rev.2.01 6/26/2003 www.SiliconStandard.com 3 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM9915H,J 25 60 50 20 ID , Drain Current (A) 40 15 PD (W) 10 5 0 25 50 75 100 125 150 30 20 10 0 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( C) o et4U.com Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature DataSheet4U.com DataShee 1000 1 DUTY=0.5 100 Normalized Thermal Response (R thjc) 10us ID (A) 100us 1ms 10ms 100ms 1 0.2 10 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T T c =25 o C Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance DataSheet4U.com Rev.2.01 6/26/2003 www.SiliconStandard.com 4 of 6 DataSheet 4 U .com www.DataSheet4U.com SSM9915H,J 16 f=1.0MHz 1000 I D =20A 14 VGS , Gate to Source Voltage (V) 12 V DS =12V V DS =16V V DS =20V C (pF) Ciss Coss 100 10 8 6 Crss 4 2 0 0 2 4 6 8 10 12 14 16 18 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics et4U.com DataShee DataSheet4U.com 100 1.2 10 0.95 T j =150 o C VGS(th) (V) T j =25 o C IS (A) 1 0.7 0.1 0.45 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Da.


TMP87PH48 SSM9915H UAF21


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)