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SSM9915H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G S D
BV DSS R DS(ON) ID
20V 50mΩ 20A
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 ± 10 20 16 41 26 0.2 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
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Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Unit ℃/W ℃/W
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SSM9915H,J
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50
Max. Units 50 80 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125oC)
o
VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS= ± 10V ID=10A VDS=20V VGS=5V VDS=10V ID=10A RG=3.3Ω,VGS=5V RD=1Ω VGS=0V DataSheet4U.com VDS=20V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
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Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V Tj=25℃, IS=20A, VGS=0V
Min. -
Typ. -
Max. Units 20 41 1.3 A A V
Pulsed Source Current ( Body Diode ) 1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
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SSM9915H,J
50
40
T C =25 o C
40
V G =4.5V
30
T C =150 o C V G =4.5V
ID , Drain Current (A)
30
ID , Drain Current (A)
V G =3.5V
V G =3.5V
20
20
V G =2.5V
10
V G =2.5V
10
V G =1.5V
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5
V G =1.5V
6 7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
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60
1.8
I D= 6 A T C =25 C Normalized R DS(ON)
50
I D =6A
1.6
o
V G =4.5V
1.4
RDSON (mΩ )
1.2
40
1.0
0.8
30
0.6
1
2
3
4
5
6
-50
0
50
100
150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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SSM9915H,J
25
60
50 20
ID , Drain Current (A)
40 15
PD (W)
10 5 0 25 50 75 100 125 150
30
20
10
0 0 50 100 150
T c , Case Temperature ( o C)
T c , Case Temperature ( C)
o
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Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
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1000
1
DUTY=0.5
100
Normalized Thermal Response (R thjc)
10us ID (A) 100us 1ms 10ms 100ms
1
0.2
10
0.1
0.1
0.05
0.02 SINGLE PULSE 0.01
PDM
t T
T c =25 o C Single Pulse
0.1 0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.1
1
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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SSM9915H,J
16
f=1.0MHz
1000
I D =20A
14
VGS , Gate to Source Voltage (V)
12
V DS =12V V DS =16V V DS =20V C (pF) Ciss Coss
100
10
8
6
Crss
4
2
0 0 2 4 6 8 10 12 14 16 18 20
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
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100 1.2
10
0.95
T j =150 o C
VGS(th) (V)
T j =25 o C IS (A)
1
0.7
0.1
0.45
0.01 0 0.4 0.8 1.2 1.6
0.2 -50 0 50 100 150
V SD (V)
T j , Junction Temperature ( o C )
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
Da.