HF70D120ACE

HF70D120ACE Features • • • • • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation PD - 93878 Hexfred Die in Wafer Form 1200V IF(nom)=75A VF(typ)= 1.75V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer Benefits Electrical Characteristics (Wafer Form) Parameter VF BVR IRM Description Forward Voltage Drop Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (min, max) 0.99V min,1.31V max 1200V min 30µA max Test Conditions IF = 10A, TJ = 25°C TJ = 25°C, IR = 500µA TJ = 25°C, VR = 1200V Mechanical Data Nominal Backmetal Composition, (Thickness) Nominal Front Metal Composition, (Thickness) Dimensions Wafer Diameter Wafer Thickness, Tolerance Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Recommended Die Attach Conditions Cr- Ni - Ag, (1kA - 4kA - 6kA) 99% Al/1% Si, (3µm) 0.234" x 0.443" 125mm, with std. < 100 > flat 310µm, +/-15µm 01-5364 100µm 0.25mm diameter minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300°C Die Outline 11.25 [.443] NOT ES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2. CONT ROLLING DIMENS ION: [INCH]. ANODE 5.94 [.234] 3. DIMENS IONAL T...