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STTH3L06

ST Microelectronics

ultrafast high-voltage rectifier

STTH3L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data A A K SMB K A K SMC DO-201AD Feature...


ST Microelectronics

STTH3L06

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STTH3L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data A A K SMB K A K SMC DO-201AD Features  Ultrafast switching  Low forward voltage drop  Low thermal resistance  Low leakage current (platinum doping) Description This device uses ST Turbo 2 600 V technology, and is particularly suited as boost diode in discontinuous or critical mode power factor corrections. It is also intended for use as a freewheeling diode in power supplies and other power switching applications. Table 1: Device summary Symbol Value IF(AV) VRRM IR (max.) Tj (max.) VF (typ.) trr (typ.) 3A 600 V 100 µA 175 °C 0.85 V 60 ns Table 2: Order codes Part number Marking STTH3L06 STTH3L06 STTH3L06U 3L6U STTH3L06S S06 April 2016 DocID8322 Rev 4 This is information on a product in full production. 1/11 www.st.com Characteristics STTH3L06 1 Characteristics Table 3: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current δ = DO-201AD/SMC TI = 100 °C 0.5, square wave SMB TI = 80 °C 3 A IFSM Surge non repetitive forward current, tp = 10 ms sinusoidal DO-201AD SMB/SMC 70 60 A A Tstg Storage temperature range Tj Maximum operating junction temperature -65 to +175 °C +175 °C Symbol Rth(j-l) Rth(j-a) Table 4: Thermal parameters Parameter DO-201AD L = 10 mm Junction to lead SMB SMC J...




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