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STP6NA60FP Datasheet, Equivalent, MOS TRANSISTOR.N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Part | STP6NA60FP |
|---|---|
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Feature | STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled rugge. |
| Manufacture | ST Microelectronics |
| Datasheet |
| Part | STP6NA60FP |
|---|---|
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Feature | STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled rugge. |
| Manufacture | ST Microelectronics |
| Datasheet |
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