AMPLIFIER TRANSISTOR. 2N3742 Datasheet

2N3742 TRANSISTOR. Datasheet pdf. Equivalent

Part 2N3742
Description AMPLIFIER TRANSISTOR
Feature 2N3742 CASE 79-02, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating.
Manufacture Motorola
Datasheet
Download 2N3742 Datasheet



2N3742
2N3742
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
vCEO
vCBO
v EBO
ic
PD
Pd
TJ- Tstg
Value
300
300
7.0
50
1.0
5.71
5.0
28.6
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, 'Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R 0JC
R &JA
Max
35
175
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltaged)
(IC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage
(IC = 100/iAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 100 ftAdc, Ic = 0)
Collector Cutoff Current
(Vcb = 200 Vdc, El = 0)
(Vcb = 200 Vdc, = 0, Ta = 100°C)
Emitter Cutoff Current
(VE b = 6.0 Vdc, Ic = 0)
ON CHARACTERISTICS^)
DC Current Gain
dC = 3.0 mAdc, V C E = 10 Vdc)
(IC = 10 mAdc, V C E = 10 Vdc)
flC = 30 mAdc, V C e = 10 Vdc)
flC = 50 mAdc, Vce = 20 Vdc)
Collector-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 30 mAdc, Ib = 3.0 mAdc)
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 30 mAdc, Ib = 3.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(3)
dC = 10 mAdc, Vce = 20 Vdc, f = 20 MHz)
Output Capacitance
(VC b = 10 Vdc, = 0, f = 100 kHz)
Input Capacitance
(V E b = 0.5 Vdc, Ic = 0, f = 100 kHz)
Input Impedance
dC = 10 mAdc, Vce = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
dC = 10 mAdc, VC e = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain
dC = 10 mAdc, Vce = 10 Vdc, f = 10 kHz)
Symbol
v (BR)CEO
V(BR)CBO
v (BR)EBO
!CBO
lEBO
Min
300
300
7.0
-
hFE
v CE(sat)
VBE(sat)
10
15
20
20
-
-
h
C bo
Qbo
n ie
n re
hfe
30
20
Max
-
-
0.2
20
0.2
Vdc
Vdc
Vdc
^Adc
jiAdc
200
0.75
1.0
1.0
1.2
-
6.0
80
2.0
2.0
200
Vdc
Vdc
MHz
PF
pF
k ohms
X10-4
4-122



2N3742
2N3742
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Output Admittance
c(l = 10 mAdc, Vqe = 1° Vdc, f = 1.0 kHz)
Real Part of Input Impedance
c(l
=
10 mAdc, Vqe
=
V dc
-
f
=
5 -0
MHz
>
(1) Pulse Test: Pulse Width « 30 /xs, Duty Cycle =s 1.0%.
(2) Pulse Test: Pulse Width =s 300 /us. Duty Cycle =s 2.0%.
(3) fj is defined as the frequency at which |hfe| extrapolates to unity.
Re(hj
(
Min
Unit
50 mhos
FIGURE 1 - DC CURRENT GAIN
III
i
--4IJI
w ...
~~-% -*
T
4 -* =^
|
Tj = 1! 0°C
>50C
»- ^' II
I
1 ^5°C -*
i4ft
^1 1
0.2
0.5 1.0
2.0
5.0
IC. COLLECTOR CURRENT (mA>
FIGURE 2 - DC SAFE OPERATING AREA
50
30
20
10
70
3.0
\
N
\
\
V
^TC - 26<>C '
\
TA = 25"C '^
\
\\
\*\
-™»— Current Rating Limit
Thermal Limit
^
\
Second Breakdown Limit
\
L_Ll.l 1,1 ,„
i ii: , i
\
5.0 7.0 10
20 30
50 70 100
Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS)
"TTT
FIGURE 3 - "ON" VOLTAGES
llll
VBI (sat)@ c/i ) = 1U
^
' r-^
,..—
1
_.Vc E(sat) ic/i 3= 10
1
.
,
1
•r
05 0.1
0.2 0.5 1.0 2.0 5.0
IC, COLLECTOR CURRENT (mA)
10
20
50
FIGURE 4 - TEMPERATURE COEFFICIENTS
I III llll
-" * APPLIES FUH c /lB<hFE/5
+"
II1 1
1
II1 1 1
*8V C'orvcEls.it)
III
11
- +25°Cto+125°C--
M=^-llll
1 V-"
-65°C to +25°C
8\/B lot Vbe
|
1 __
H-55°C to +13 5°C
IUL-—
)05 0.1
0.2 0.5 1.0 2.0 5.0
IC. COLLECTOR CURRENT (mA)
10
20
50
FIGURE 5 - CURRENT-GAIN-BANDWIDTH PRODUCT
III
III
1
1
- f = 20MHz
Tj = 25°C
S 20
II 1 1
1 .0 \l
2 10
S B.O
= 6.0
u
U 4.0
0.05
0.1
0.2 0.5 1.0 2.0 5.0
IC COLLECTOR CURRENT (mA)
\
\
N
{
\
\
10 20
50
h-
FIGURE 6 - CAPACITANCE
b
' l = 25°C._.
0.1 0.2
0.5 1.0 2.0
5.0 10 20
Vr, REVERSE VOLTAGE (VOLTS)
50 100
4-123





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