STP55NE06L

STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 TO220FP INTERNAL SCHEMATIC DIAGRAM Valu e STP55NE06L ST P55NE06LFP 60 60 ± 15 o Unit V DS V DGR V GS ID ID IDM ( ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor o o V V V 28 20 220 35 0.23 2000 A A A W W/ C V V/ns o o o 55 39 220 130 0.86  7 -65 to 175 175 V ISO dV/dt T stg Tj Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperat...