Power Transistor Array STA415A
Absolute Maximum Ratings (Ta=25ºC)
Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty...
Power
Transistor Array STA415A
Absolute Maximum Ratings (Ta=25ºC)
Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 35± 5 36± 5 6 2 (pulse 3*) 30 4 (Ta = 25ºC) 18 (Tc = 25ºC) 150 –55 to +150 25% Unit V V V A mA W W ºC ºC
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800± 120 2.0± 0.4 50min
±0.2
±0.2
9.0
±0.2
(Ta=25ºC) Unit µA mA V V V V Ω kΩ mJ
External Dimensions STA4 (LF412)
25.25
±0.2
b a
11.3
3.5
±0.5
2.3
1.0
±0.25
0.5
±0.15
(2.54) 0
±0.3
0
±0.3
9 2.54=22.86
±0.05
±0.15
Typical Switching Characteristics
VCC (V) 12 RL (Ω) 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) 0 ton (µs) 1.0 tstg (µs) 8.5 tf (µs) 2.5
1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E
a) Type No. b) Lot No. (Unit: mm)
s IC — VCE Characteristics (typ.)
30m A
s VCE (sat) — IB Temperature Characteristics
0.5
8mA 5mA (IC = 0.5A)
s VCE (sat) — IC Temperature Characteristics
3
IC /IB = 100
3
12
A m
VCE (sat) (V)
IC (A)
3mA 2mA
VCE (sat) (V)
2
2
Ta = 125ºC 75ºC 25ºC –40ºC
0.25
1
IB = 1mA
Ta = 125ºC 75ºC 25ºC –40ºC
1
0
0 0 1 2 3 4 5 6 1 10 100 400
0
0
0.5
1
0.5
1.2
4.0
L = 10mH, single pulse
C1.5
±0.5
±0.2
±0.2±
5
VCE (V)
IB (mA)
IC (A)
s hFE — IC Temperature Characteristics
3000
(VCE = 4V)
s tontstgtf — IC Characteristics (typ.)...
