SI4558DY

Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.040 @ VGS = 10 V 0.060 @ VGS = 4.5 V ID (A) "6 "4.8 "6 "4.4 P-Channel –30 0.040 @ VGS = –10 V 0.070 @ VGS = –4.5 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "6 "4.7 "30 2 2.4 P-Channel –30 "20 "6 "4.7 "30 –2 Unit V A W 1.5 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70633 S-56944—Rev. E, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P- Channel 52 Unit _C/W 2-1 Si4558DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z Zero Gate G Voltage V l Drain D i Current C IDSS VDS = –30 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = –24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V b O S On-State Drain D i Current C Symbol Test Condition Min...