UPA675T

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 1.25 ±0.1 2.1 ±0.1 6 5 4 0 to 0.1 FEATURES Two MOS FET circuits in package the same size as SC-70 Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current Since bias resistance can be omitted, the number of components required can be reduced 1 2 3 0.7 0.9 ±0.1 0.65 0.65 1.3 2.0 ±0.2 PIN CONNECTION ORDERING INFORMATION 6 5 4 PART NUMBER PACKAGE SC-88 (SSP) 1. 2. 3. 4. 5. 6. Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 (S1) (G1) (D2) (S2) (G2) (D1) µ PA675T Note Note Marking: SA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (Tc = 25°C) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 16 ±7.0 ±0.1 ±0.2 0.2 150 –55 to +150 V V A A W °C °C 1 2 3 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 ms, Duty Cycle ≤ 50% The information in this document is subject to change wi...