IRG4PH50U Datasheet (data sheet) PDF





IRG4PH50U Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50U   IRG4PH50U  

Search Keywords: IRG4PH50U, datasheet, pdf, IRF, INSULATED, GATE, BIPOLAR, TRANSISTOR, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

PD - 91574B IRG4PH50U INSULATED GATE BI POLAR TRANSISTOR Features • UltraFast : Optimized for high operating frequenc ies up to 40 kHz in hard switching, >20 0 kHz in resonant mode • New IGBT des ign provides tighter parameter distribu tion and higher efficiency than previou s generations • Optimized for power c onversion; SMPS, UPS and welding • In dustry standard TO-247AC package C Ult ra Fast Speed IGBT VCES = 1200V G E V CE(on) typ. = 2.78V @VGE = 15V, IC = 24 A n-channel Benefits • Higher switc hing frequency capability than competit ive IGBTs • Highest efficiency availa ble • Much lower conduction losses th an MOSFETs • More efficient than short

IRG4PH50U Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50U   IRG4PH50U  
circuit rated IGBTs TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EA RV PD @ T C = 25°C PD @ T C = 100°C T J TSTG Collector-to-Emitter Breakdown V oltage Continuous Collector Current Con tinuous Collector Current Pulsed Collec tor Current Q Clamped Inductive Load Cu rrent R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Pow er Dissipation Maximum Power Dissipatio n Operating Junction and Storage Temper ature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 ± 20 1 70 200 78 -55 to + 150 300 (0.063 in. ( 1.6mm) from case ) 10 lbf•in (1.1N• m) Units V A V mJ W °C Thermal Res istance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Gr eased Surface Junction-to-Ambient, typi cal socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 0.64 – –– 40 ––– Units °C/W g (oz) www.irf.com 1 01/14/02 IRG4PH50U El ectrical Characteristics @ TJ = 25°C ( unless otherwise specified) V(BR)CES V( BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE( th) ∆VGE(th)/∆TJ gfe ICES IGES Par ameter Min. Typ. Max. Units Collector-t o-Emitter Breakdown Voltage 1200 — V Emitter-to-Collector Breakdown Volt age T 18 — — V Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C — 2.56 3.5 — 2.78 3.7 Collector-t








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)