BIPOLAR TRANSISTOR. IRG4PH50U Datasheet

IRG4PH50U TRANSISTOR. Datasheet pdf. Equivalent

Part IRG4PH50U
Description INSULATED GATE BIPOLAR TRANSISTOR
Feature PD - 91574B IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high op.
Manufacture IRF
Datasheet
Download IRG4PH50U Datasheet



IRG4PH50U
PD - 91574B
INSULATEDGATEBIPOLARTRANSISTOR
Features
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
Optimized for power conversion; SMPS, UPS
and welding
Industry standard TO-247AC package
IRG4PH50U
Ultra Fast Speed IGBT
C
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.78V
@VGE = 15V, IC = 24A
Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
Much lower conduction losses than MOSFETs
More efficient than short circuit rated IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-247AC
Max.
1200
45
24
180
180
± 20
170
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
01/14/02



IRG4PH50U
IRG4PH50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — —
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 — —
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 1.20 V/°C VGE = 0V, IC = 1.0mA
2.56 3.5
IC = 20A
VCE(ON)
Collector-to-Emitter Saturation Voltage
2.78 3.7
3.20
V
IC = 24A
IC = 45A
VGE = 15V
See Fig.2, 5
2.54
IC = 24A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -13 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance U
23 35 S VCE = 100V, IC = 24A
— — 250
VGE = 0V, VCE = 1200V
ICES
Zero Gate Voltage Collector Current
— — 2.0 µA VGE = 0V, VCE = 24V, TJ = 25°C
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Eon
Eoff
Ets
LE
Cies
Coes
Cres
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
160 250
IC = 24A
27 40 nC VCC = 400V
See Fig. 8
53 83
VGE = 15V
35
15 ns TJ = 25°C
200 350
IC = 24A, VCC = 960V
290 500
VGE = 15V, RG = 5.0
0.53
Energy losses include "tail"
1.41 mJ See Fig. 9, 10, 14
1.94 2.6
31
TJ = 150°C
18 ns IC = 24A, VCC = 960V
320
VGE = 15V, RG = 5.0
280
Energy losses include "tail"
5.40 mJ See Fig. 11, 14
0.35
TJ = 25°C, VGE = 15V, RG = 5.0
1.43 mJ IC = 20A, VCC = 960V
1.78 2.9
Energy losses include "tail"
4.56
See Fig. 9, 10, 11, 14, TJ = 150°C
13 nH Measured 5mm from package
3600
VGE = 0V
160 pF VCC = 30V
See Fig. 7
31
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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