IRG4PH50KD Datasheet (data sheet) PDF





IRG4PH50KD Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50KD   IRG4PH50KD  

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PD- 91575B IRG4PH50KD INSULATED GATE BI POLAR TRANSISTOR WITH ULTRAFAST SOFT RE COVERY DIODE Features • High short ci rcuit rating optimized for motor contro l, tsc =10µs, VCC = 720V , TJ = 125°C , VGE = 15V • Combines low conduction losses with high switching speed • T ighter parameter distribution and highe r efficiency than previous generations • IGBT co-packaged with HEXFREDTM ult rafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFas t IGBT VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an n el Benefits • Latest generation 4 IG BT's offer highest power density motor controls possible • HEXFREDTM diodes

IRG4PH50KD Datasheet, INSULATED GATE BIPOLAR TRANSISTOR

IRG4PH50KD   IRG4PH50KD  
optimized for performance with IGBTs. Mi nimized recovery characteristics reduce noise, EMI and switching losses • Th is part replaces the IRGPH50KD2 and IRG PH50MD2 products • For hints see desi gn tip 97003 TO-247AC Absolute Maximu m Ratings Parameter VCES IC @ TC = 25° C IC @ TC = 100°C ICM ILM IF @ TC = 10 0°C IFM tsc VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current C ontinuous Collector Current Pulsed Coll ector Current Q Clamped Inductive Load Current R Diode Continuous Forward Curr ent Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maxi mum Power Dissipation Operating Junctio n and Storage Temperature Range Solderi ng Temperature, for 10 sec. Mounting To rque, 6-32 or M3 Screw. Max. 1200 45 2 4 90 90 16 90 10 ± 20 200 78 -55 to +1 50 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to- Case - IGBT Junction-to-Case - Diode Ca se-to-Sink, flat, greased surface Junct ion-to-Ambient, typical socket mount We ight Min. ––– ––– –– ––– ––– Typ. ––– –– 0.24 ––– 6 (0.21) Max. 0.64 0.83 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH50KD Electrical Characteristics @ TJ = 25°C (u








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