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H9012

Shantou Huashan

PNP Silicon Transistor

www.DataSheet4U.com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 █ 1W OUT...


Shantou Huashan

H9012

File Download Download H9012 Datasheet


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www.DataSheet4U.com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H9012 █ 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg —— Storage Temperature ………………………… -55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-20V V EBO —— Emitter-Base Voltage ……………………………… -5V I C ——Collector Current…………………………………… -500mA TO-92 1―Emitter,E 2―Base,B 3―Collector, C █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector Cut-off Current DataSheet4U.com Min Typ Max Unit Test Conditions DataShee ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) VBE(ON) BVCBO BVCEO BVEBO -100 -100 78 40 246 -600 -1.2 -600 -40 -20 -5 -730 nA nA VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage mV V mV V V V IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-10mA IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA,IC=0 █ hFE Classification E 78—112 F 96—135 G 112—166 H 144—202 I 176—246 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. ...




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