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KM6264B

Samsung

8K x 8 bit Low Power CMOS Static RAM

KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY • Process Technology : CMOS • Organization : 8K x 8 • ...


Samsung

KM6264B

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Description
KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY Process Technology : CMOS Organization : 8K x 8 Power Supply Voltage : Single 5V ± 10% Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : JEDEC Standard 28-DIP, 28-SOP CMOS SRAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operations with low data retention current. PRODUCT FAMILY Product Family KM6264BL KM6264BL-L KM6264BLE KM6264BLE-L KM6264BLI KM6264BLI-L Operating Temperature Commercial (0~70 °C) Extended (-25~-85 °C) Industrial (-40~85 °C) Speed PKG Type Power Dissipation Standby(Isb1, Max) Operating(Icc2) 100uA 70/100/120ns 28-DIP, 28-SOP 100*ns 100*ns 28-SOP 28-SOP 10uA 100uA 50uA 100uA 50uA 55mA * measured with 30pF test load PIN DESCRIPTION N.C A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 Vcc /WE FUNCTIONAL BLOCK DIAGRAM Y-Decoder X-Decoder Control Logic CS2 A8 A9 A11 /OE A10 /CS1 I/O8 I/O7 I/O6 I/O5 I/O4 Cell Array A0~A12 28-Pin DIP 28-Pin SOP 22 21 20 19 18 17 16 15 I/O1~8 I/O Buffer Function /CS1, CS2 /WE, /OE Pin Name A0~A12 /WE /CS1, CS2 /OE I/O1~I/O8 Vcc Vss N.C Address Inputs Write Enable Input Chip Select Input Output Enable I...




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