MPF930

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF930/D TMOS Switching N–Channel — Enhancement 2 GATE 3 DRAIN MPF930 MPF960 MPF990 1 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.0 8.0 TJ, Tstg θJA – 55 to 150 125 Watts mW/°C °C °C/W MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.0 3.0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc 1 2 3 CASE 29–05, STYLE 22 TO–92 (TO–226AE) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) V(BR)DSX MPF930 MPF960 MPF990 IGSS 35 60 90 — — — — — — — — 50 nAdc Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS(2) Zero–Gate–Voltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 0.5 Adc) MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 IDSS VGS(Th) VDS(on) — — — — — — — — — 0.4 0.6 0.6 0.9 1.2 1.2 2.2 2.8 2.8 0.7 0.8 1.2 1.4 1.7 2.4 3.0 3.5 4.8 — 1.0 — — 10 3.5 µAdc Vdc Vdc (ID = 1.0 Adc) (ID = 2.0 Adc) 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pu...