MPF102

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPF102/D JFET VHF Amplifier N–Channel — Depletion 1 DRAIN 3 GATE MPF102 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG PD TJ Tstg Value 25 25 – 25 10 350 2.8 125 – 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –10 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0) (VGS = –15 Vdc, VDS = 0, TA = 100°C) Gate – Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) Gate – Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) V(BR)GSS IGSS — — VGS(off) VGS — –0.5 –2.0 – 2.0 – 8.0 –7.5 nAdc µAdc Vdc Vdc – 25 — Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc SMALL– SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 1. Pulse Test; Pulse Width yfs 2000 1600 Re(yis) Re(...