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TC58NS100DC

1 GBit CMOS NAND EPROM

Description

TC58NS100DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 TM 1-GBIT (128M × 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DESCRIPTION ) The TC58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has...

Toshiba

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TC58NS100DC 1 GBit CMOS NAND EPROM - Toshiba

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