DSEP30-03A

DSEP 30-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 30-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 300 1.2 0.3 -55...+175 175 -55...+150 A A A mJ A °C °C °C W Nm g Features International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see pages Outlines.pdf TC = 25°C mounting torque typical 165 0.8...1.2 6 Symbol IR ① Conditions VR = VRRM; VR = VRRM; IF = 30 A; TVJ = 25°C TVJ = 150°C TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 250 1 1.14 1.55 0.9 0.25 µA mA V V K/W ...