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B ver. HYMD564646Bxx Datasheet

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B ver. HYMD564646Bxx Datasheet






HYMD564646Bxx ver. Datasheet pdf. Equivalent




HYMD564646Bxx ver. Datasheet pdf. Equivalent





Part

HYMD564646Bxx

Description

184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver



Feature


www.DataSheet4U.com 184pin Unbuffered D DR SDRAM DIMMs based on 512Mb B ver. Th is Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II pa ckages on a 184pin glass-epoxy substrat e. This Hynix 512Mb B ver. based unbuff ered DIMM series provide a high perform ance 8 byte interface in 5.25" width fo rm factor of indus.
Manufacture

Hynix

Datasheet
Download HYMD564646Bxx Datasheet


Hynix HYMD564646Bxx

HYMD564646Bxx; try standard. It is suitable for easy in terchange and addition. FEATURES β€’ β €’ β€’ β€’ β€’ β€’ β€’ JEDEC Standard 1 84-pin dual in-line memory module (DIMM ) Two ranks 128M x 72, 128M x 64 and On e rank 64M x 72, 64M x 64, 32M x 64 org anization 2.6V Β± 0.1V VDD and VDDQ Pow er supply for DDR400, 2.5V Β± 0.2V for DDR333 and below All inputs and outputs are compatible with SSTL_2 interf.


Hynix HYMD564646Bxx

ace Fully differential clock operations (CK & /CK) with 133/166/200MHz DLL alig ns DQ and DQS transition with CK transi tion Programmable CAS Latency: DDR266(2 , 2.5 clock), DDR333(2.5 clock), DDR400 (3 clock) β€’ β€’ β€’ β€’ β€’ β€’ β€’ P rogrammable Burst Length 2 / 4 / 8 with both sequential and interleave mode Ed ge-aligned DQS with data outs and Cente r-aligned DQS with data inputs A.


Hynix HYMD564646Bxx

uto refresh and self refresh supported 8 192 refresh cycles / 64ms Serial Presen ce Detect (SPD) with EEPROM Built with 512Mb DDR SDRAMs in 400 mil TSOP II pac kages Lead-free product listed for each configuration (RoHS compliant) ADDRES S TABLE DataSheet4U.com Organization 25 6MB 512MB 512MB 1GB 1GB 32M x 64 64M x 64 64M x 72 128M x 64 128M x 72 Ranks 1 1 1 2 2 SDRAMs 32.

Part

HYMD564646Bxx

Description

184 Pin Unbuffered DDR SDRAM DIMMs Based on 512Mb B ver



Feature


www.DataSheet4U.com 184pin Unbuffered D DR SDRAM DIMMs based on 512Mb B ver. Th is Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil TSOP II pa ckages on a 184pin glass-epoxy substrat e. This Hynix 512Mb B ver. based unbuff ered DIMM series provide a high perform ance 8 byte interface in 5.25" width fo rm factor of indus.
Manufacture

Hynix

Datasheet
Download HYMD564646Bxx Datasheet




 HYMD564646Bxx
www.DataSheet4U.com
184pin Unbuffered DDR SDRAM DIMMs based on 512Mb B ver.
This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil
TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based unbuffered DIMM series provide
a high performance 8 byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange
and addition.
FEATURES
β€’ JEDEC Standard 184-pin dual in-line memory module
(DIMM)
β€’ Two ranks 128M x 72, 128M x 64 and One rank 64M
x 72, 64M x 64, 32M x 64 organization
β€’ 2.6V Β± 0.1V VDD and VDDQ Power supply for
DDR400, 2.5V Β± 0.2V for DDR333 and below
β€’ All inputs and outputs are compatible with SSTL_2
interface
β€’ Fully differential clock operations (CK & /CK) with
133/166/200MHz
β€’ DLL aligns DQ and DQS transition with CK transition
β€’ Programmable CAS Latency: DDR266(2, 2.5 clock),
DDR333(2.5 clock), DDR400(3 clock)
β€’ Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
β€’ Edge-aligned DQS with data outs and Center-aligned
DQS with data inputs
β€’ Auto refresh and self refresh supported
β€’ 8192 refresh cycles / 64ms
β€’ Serial Presence Detect (SPD) with EEPROM
β€’ Built with 512Mb DDR SDRAMs in 400 mil TSOP II
packages
β€’ Lead-free product listed for each configuration
(RoHS compliant)
ADDRESS TABLE
Organization Ranks
256MB
512MB
512MB
1GB
1GB
32M x 64
64M x 64
64M x 72
128M x 64
128M x 72
1
1
1
2
2
DataSheet4U.com
SDRAMs
# of
DRAMs
# of row/bank/column Address
32Mb x 16
4
13(A0~A12)/2(BA0,BA1)/10(A0~A9)
64Mb x 8
8 13(A0~A12)/2(BA0,BA1)/11(A0~A9,A11)
64Mb x 8
9 13(A0~A12)/2(BA0,BA1)/11(A0~A9,A11)
128Mb x 8
16 13(A0~A12)/2(BA0,BA1)/11(A0~A9,A11)
128Mb x 8
18 13(A0~A12)/2(BA0,BA1)/11(A0~A9,A11)
Refresh
Method
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
8K / 64ms
PERFORMANCE RANGE
Part-Number Suffix
Speed Bin
CL - tRCD- tRP
Max Clock
Frequency
CL=3
CL=2.5
CL=2
-D431
DDR400B
3-3-3
200
166
133
-J
DDR333
2.5-3-3
-
166
133
-H
DDR266B
2.5-3-3
-
133
133
Note:
1. 2.6V Β± 0.1V VDD and VDDQ Power supply for DDR400 and 2.5V Β± 0.2V for DDR333 and below
Unit
-
CK
MHz
MHz
MHz
DataShee
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 1.1 / May. 2005
1
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 HYMD564646Bxx
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1184pin Unbufferd DDR SDRAM DIMMs
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ORDERING INFORMATION
Part Number
HYMD532646B6-H
HYMD532646BP6-H
HYMD532646B6J-D43/J
HYMD532646BP6J-D43/J
HYMD564646B8-H
HYMD564646BP8-H
HYMD564646B8J-D43/J
HYMD564646BP8J-D43/J
HYMD564726B8-H
HYMD564726BP8-H
HYMD564726B8J-D43/J
HYMD564726BP8J-D43/J
HYMD512646B8-H
HYMD512646BP8-H
HYMD512646B8J-D43/J
HYMD512646BP8J-D43/J
HYMD512726B8-H
HYMD512726BP8-H
HYMD512726B8J-D43/J
HYMD512726BP8J-D43/J
Density Organization
# of
DRAMs
Material
256MB
256MB
256MB
256MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
512MB
1GB
32Mb x 16
32Mb x 16
32Mb x 16
32Mb x 16
64Mb x 8
64Mb x 8
64Mb x 8
64Mb x 8
64Mb x 8
64Mb x 8
64Mb x 8
64Mb x 8
128Mb x 8
4 Normal
4 Lead-free1
4 Normal
4 Lead-free1
8 Normal
8 Lead-free1
8 Normal
8 Lead-free1
9 Normal
9 Lead-free1
9 Normal
9 Lead-free1
16 Normal
1GB 128Mb x 8
16 Lead-free1
1GB 128Mb x 8DataShe1e6t4U.comNormal
1GB 128Mb x 8
16 Lead-free1
1GB 128Mb x 8
18 Normal
1GB 128Mb x 8
18 Lead-free1
1GB 128Mb x 8
18 Normal
1GB 128Mb x 8
18 Lead-free1
DIMM Dimension
ECC
Support
133.35 x 31.75 x 3.18 [mm3]
None
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
133.35 x 31.75 x 4 [mm3]
None
None
None
None
None
None
None
ECC
ECC
ECC
ECC
None
↑ None
↑ None
↑ None
↑ ECC
↑ ECC
↑ ECC
↑ ECC
Note:
1. The β€œLead-free” products contain Lead less than 0.1% by weight and satisfy RoHS - please contact Hynix for product availability.
* These products are built with HY5DU124(8,16)22BT[P], the Hynix DDR SDRAM component.
DataShee
Rev. 1.1 / May. 2005
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 HYMD564646Bxx
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PIN DESCRIPTION
Pin
CK0~2, /CK0~2
/CS0, /CS1
CKE0, CKE1
/RAS, /CAS, /WE
A0 ~ A13
A10/AP
BA0, BA1
DQ0~DQ63
CB0~CB7
DQS0~DQS8
DM0~8
Pin Description
Differential Clock Inputs
Chip Select Inputs
Clock Enable Inputs
Commend Sets Inputs
Address Inputs
Address Input/Autoprecharge
Bank Address
Data Inputs/Outputs
Data Check bits
Data Strobes
Data-in Masks
1184pin Unbufferd DDR SDRAM DIMMs
Pin
VDD
VDDQ
VSS
VREF
VDDSPD
VDDID
SA0~SA2
SCL
SDA
DU
NC
TEST
Pin Description
Power Supply for Core and I/O
Power Supply for DQs
Ground
Input/Output Reference
Power Supply for SPD
VDD, VDDQ Level Detection
SPD Address Inputs
SPD Clock Input
SPD Data Input/Output
Do not Use
No Connect
Reserved for test equipment use
et4U.com
PIN ASSIGNMENT
Pin Name Pin Name Pin Name Pin Name Pin Name Pin
Name
1
VREF
32
A5
62 VDDQ 93
VSS 124 VSS 154
/RAS
2 DQ0 33 DQ24 63 /WE 94 DQ4 125 A6 155 DQ45
3 VSS 34 VSS 64 DQ41 95 DQ5 126 DQ28 156 VDDQ
4
DQ1
35 DQ25 65
/CAS
96
VDDQ
127
DQ29
157
/CS0
5 DQS0 36 DQS3 66 VSS
97 DM0,DQS9 128
VDDQ
158
/CS1
6
DQ2 37
A4
67 DQS5 98
DQ6
129 DM3,DQS12 159 DM5,DQS14
7 VDD 38 VDD 68 DQ42 99 DQ7 130 A3 160
VSS
8 DQ3 39 DQ26 69 DQ43 100 VSS 131 DQ30 161 DQ46
9 NC 40 DQ27 70 VDD 101 NC 132 VSS 162 DQ47
10 NC 41 A2 71 NC,/CS2 102 NC,TEST 133 DQ31 163 NC,/CS3
11 VSS 42 VSS 72 DDQa48taShee10t43U.cNoCm,FETEN 134 CB4,NC 164 VDDQ
12 DQ8 43
A1
73 DQ49 104 VDDQ 135 CB5,NC 165
DQ52
13 DQ9 44 CB0,NC 74 VSS 105 DQ12 136 VDDQ 166 DQ53
14 DQS1 45 CB1,NC 75 /CK2 106 DQ13 137 CK0 167 NC,A13
15 VDDQ 46
VDD
76
CK2
107 DM1,DQS10 138
/CK0
168
VDD
16
CK1
47 NC,DQS8 77
VDDQ
108
VDD
139
VSS
169
DM6
17 /CK1 48
A0
78 DQS6 109 DQ14 140 DM8,DQS17 170
DQ54
18 VSS 49 CB2,NC 79 DQ50 110 DQ15 141 A10 171 DQ55
19 DQ10 50
VSS
80
DQ51
111
CKE1
142 CB6,NC 172
VDDQ
20 DQ11 51 CB3,NC 81 VSS 112 VDDQ 143 VDDQ 173
NC
21 CKE0 52 BA1 82 VDDID 113 BA2 144 CB7,NC 174 DQ60
22 VDDQ
Key 83 DQ56 114 DQ20
Key 175 DQ61
23 DQ16 53 DQ32 84 DQ57 115 A12 145 VSS 176
VSS
24 DQ17 54 VDDQ 85 VDD 116 VSS 146 DQ36 177 DM7,DQS16
25 DQS2 55 DQ33 86 DQS7 117 DQ21 147 DQ37 178
DQ62
26 VSS 56 DQS4 87 DQ58 118 A11 148 VDD 179 DQ63
27
A9
57 DQ34 88 DQ59 119 DM2,DQS11 149 DM4,DQS13 180
VDDQ
28 DQ18 58 VSS 89 VSS 120 VDD 150 DQ38 181
SA0
29 A7 59 BA0 90 NC 121 DQ22 151 DQ39 182 SA1
30 VDDQ 60 DQ35 91 SDA 122 A8 152 VSS 183
SA2
31 DQ19 61 DQ40 92 SCL 123 DQ23 153 DQ44 184 VDDSPD
note:
1. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are reserved for x72 variants of this module and are not used on the x64 versions.
2. Pins 111, 158 are not used for single rank module.
3. Pin 167 is β€œNC” for 256MB, 512MB and 1GB or β€œA13” for 2GB module.
4. Pins 9, 10, 71, 82, 90, 101, 102, 103, 113, 163, 167, 173 are not used on this module.
DataShee
Rev. 1.1 / May. 2005
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