MPSA42

NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 q q q High breakdown voltage Low collector-emitter saturation voltage Complementary types: MPSA 92 MPSA 93 (PNP) 1 32 Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code 1 Q68000-A413 Q68000-A4809 E Pin Configuration 2 B 3 C Package 1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TC = 66 ˚C 2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case 2) Symbol MPSA 42 Values MPSA 43 200 200 6 500 100 625 150 – 65 … + 150 mW ˚C mA V 300 300 Unit VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on AI-heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 MPSA 42 MPSA 43 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 MPSA 42 MPSA 43 Collector-base breakdown voltage IC = 100 µA, IB = 0 MPSA 42 MPSA 43 Emitter-base breakdown voltage Limit Values typ. max. Unit V(BR)CE0 300 200 – – – – – – – – – – V V(BR)CB0 300 200 IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 °C VCB = 160 V, TA = 150 °C Emitter-base cutoff current MPSA 42 MPSA 43 MPSA 42 MPSA 43 V(BR)EB0 ICB0 6 – – – – – – – – – 100 10...